STMicroelectronics_STW28N60M2

STMicroelectronics
STW28N60M2  
Single FETs, MOSFETs

STMicroelectronics
STW28N60M2
278-STW28N60M2
Ersa
STMicroelectronics-STW28N60M2-datasheets-8752672.pdf
MOSFET N-CH 600V 24A TO247
In Stock : 482

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STW28N60M2 Description

STW28N60M2 Description

The STW28N60M2 is a high-performance MOSFET N-CH 600V 24A TO247 from STMicroelectronics. This single FET is designed for applications requiring high voltage and current handling capabilities. With its advanced MOSFET technology, the STW28N60M2 offers excellent electrical characteristics, making it ideal for various power electronics applications.

STW28N60M2 Features

  • 600V Drain to Source Voltage (Vdss): The STW28N60M2 can handle high voltages, making it suitable for applications such as power supplies, motor drives, and industrial control systems.
  • 24A Continuous Drain Current (Id) @ 25°C: This high current rating allows the STW28N60M2 to handle demanding power applications with ease.
  • 150mOhm Rds On (Max) @ 12A, 10V: The low on-resistance of the STW28N60M2 contributes to its high efficiency and reduced power dissipation.
  • 4V Vgs(th) (Max) @ 250µA: The low threshold voltage enables easy gate drive and reduces power consumption in the gate circuit.
  • 1370 pF Input Capacitance (Ciss) (Max) @ 100 V: This high input capacitance allows for fast switching speeds and improved transient response.
  • 37 nC Gate Charge (Qg) (Max) @ 10 V: The low gate charge contributes to reduced switching losses and improved efficiency.
  • 170W Power Dissipation (Max) (Tc): The STW28N60M2 can dissipate a significant amount of power, making it suitable for high-power applications.
  • Through Hole Mounting Type: This package type provides a robust and reliable mechanical connection, suitable for various PCB designs.
  • REACH Unaffected and ROHS3 Compliant: The STW28N60M2 meets the latest environmental regulations, ensuring its use in eco-friendly products.

STW28N60M2 Applications

The STW28N60M2 is ideal for a wide range of applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the STW28N60M2 is well-suited for power supply designs, such as SMPS and offline converters.
  2. Motor Drives: The STW28N60M2's high voltage and current capabilities make it an excellent choice for motor drive applications, including industrial motor control and electric vehicle motor control.
  3. Industrial Control Systems: The STW28N60M2's robust performance characteristics make it suitable for use in industrial control systems, such as PLCs and motor controllers.
  4. Renewable Energy Systems: The STW28N60M2 can be used in renewable energy systems, such as solar inverters and wind turbine converters, due to its high voltage and power handling capabilities.

Conclusion of STW28N60M2

The STW28N60M2 from STMicroelectronics is a high-performance MOSFET designed for demanding power electronics applications. Its unique combination of high voltage, current, and power dissipation capabilities, along with its low on-resistance and gate charge, make it an ideal choice for power supplies, motor drives, and industrial control systems. The STW28N60M2's compliance with environmental regulations and its robust through-hole package ensure its suitability for a wide range of applications in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW28N60M2 Documents

Download datasheets and manufacturer documentation for STW28N60M2

Ersa STx28N60M2 Datasheet      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STx28N60M2 Datasheet      

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