STMicroelectronics_STD12NM50N
original

STMicroelectronics
STD12NM50N

278-STD12NM50N
500V 11A N-CH MOSFET, 380mR Rds On, DPAK, Power

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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
380mR
Dual Supply Voltage
500V
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STD12NM50N Description

STD12NM50N Description

The STD12NM50N is a high-performance N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by STMicroelectronics. This device is part of the MDmesh™ II series and is known for its robust performance and reliability. With a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at 25°C, the STD12NM50N is capable of handling high power applications. It features a low on-resistance (Rds On) of 380mOhm at 5.5A and 10V, ensuring efficient power dissipation with a maximum power dissipation (Pd) of 100W at case temperature (Tc). The device is also compliant with the RoHS3 standard, making it an environmentally friendly choice for electronic designs.

STD12NM50N Features

  • High Voltage and Current Handling: The STD12NM50N can handle a drain-source voltage of up to 500V and a continuous drain current of 11A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With an Rds On of 380mOhm at 5.5A and 10V, the STD12NM50N offers efficient power dissipation and reduced power losses.
  • Robust Power Dissipation: The device can dissipate up to 100W at case temperature (Tc), ensuring reliable operation in high-power applications.
  • Compliance with RoHS3: The STD12NM50N is compliant with the RoHS3 standard, making it an environmentally friendly choice for electronic designs.
  • Surface Mount Technology: The device is designed for surface mount applications, providing a compact and efficient solution for space-constrained designs.

STD12NM50N Applications

The STD12NM50N is ideal for a wide range of applications due to its high voltage and current handling capabilities, low on-resistance, and robust power dissipation. Some specific use cases include:

  1. Power Electronics: The STD12NM50N can be used in power electronics applications such as power supplies, converters, and inverters, where high voltage and current handling are required.
  2. Industrial Control Systems: The device is suitable for industrial control systems, where high power dissipation and reliability are crucial.
  3. Automotive Applications: The STD12NM50N can be used in automotive applications such as electric vehicle charging systems, where high voltage and current handling are essential.
  4. Renewable Energy Systems: The device can be employed in renewable energy systems, such as solar inverters and wind power converters, where high power efficiency and reliability are required.

Conclusion of STD12NM50N

The STD12NM50N is a high-performance N-Channel MOSFET that offers a combination of high voltage and current handling capabilities, low on-resistance, and robust power dissipation. Its compliance with the RoHS3 standard and surface mount technology make it an ideal choice for a wide range of high-power applications. Despite being classified as obsolete, the STD12NM50N remains a reliable and efficient solution for applications where high power performance and reliability are paramount.

FAQ

What operating temperature range does STD12NM50N support?
STD12NM50N has an operating temperature range of 150°C.
Is STD12NM50N currently in stock?
What is the mounting type of STD12NM50N?
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