STMicroelectronics_STF3NK80Z

STMicroelectronics
STF3NK80Z  
Single FETs, MOSFETs

STMicroelectronics
STF3NK80Z
278-STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
In Stock : 1089

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    STF3NK80Z Description

    STMicroelectronics' STF3NK80Z is a high-power N-channel MOSFET transistor that is designed for use in a variety of applications, including motor control, power supplies, and automotive systems.

    Description:

    The STF3NK80Z is an N-channel MOSFET transistor that features a high current capability and low on-state resistance. It is available in a TO-220 package, which is a popular and widely used package for power transistors.

    Features:

    • High current capability: The STF3NK80Z is capable of handling high currents, making it suitable for use in power applications.
    • Low on-state resistance: The low on-state resistance of the STF3NK80Z allows for efficient power transfer and reduced power loss.
    • High voltage rating: The STF3NK80Z has a high voltage rating, making it suitable for use in high voltage applications.
    • Robust design: The STF3NK80Z is designed to be robust and reliable, with built-in protection features to protect against over-voltage, over-current, and over-temperature conditions.

    Applications:

    The STF3NK80Z is suitable for use in a variety of applications, including:

    • Motor control: The high current and voltage ratings of the STF3NK80Z make it well-suited for use in motor control applications, such as in industrial machinery and automotive systems.
    • Power supplies: The STF3NK80Z can be used in power supply applications, such as in switching power supplies and battery chargers.
    • Automotive systems: The STF3NK80Z is suitable for use in automotive systems, such as in the control of electric motors and power windows.

    Overall, the STF3NK80Z is a high-power N-channel MOSFET transistor that offers a combination of high current capability, low on-state resistance, and high voltage rating. Its robust design and wide range of applications make it a popular choice for use in power electronics and motor control applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STF3NK80Z Documents

    Download datasheets and manufacturer documentation for STF3NK80Z

    Ersa STx3NK80Z(-1)      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STF3NK80Z View All Specifications      
    Ersa STx3NK80Z(-1)      

    Shopping Guide

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