STMicroelectronics

STP9N60M2  

Single FETs, MOSFETs

STP9N60M2 Description

The STP9N60M2 from STMicroelectronics is a 600V N-channel MOSFET designed for high-efficiency power switching applications. Part of the MDmesh™ II Plus series, it leverages advanced Metal Oxide (MOSFET) technology to deliver superior performance in high-voltage circuits. With a continuous drain current (Id) of 5.5A (at 25°C) and a low on-resistance (Rds(on)) of 780mΩ (at 3A, 10V), this device minimizes conduction losses, making it ideal for energy-conscious designs. Its 600V drain-to-source voltage (Vdss) rating ensures robustness in demanding environments, while the ±25V gate-source voltage (Vgs) tolerance provides flexibility in drive circuitry.

STP9N60M2 Features

• High Voltage & Current Handling: 600V Vdss and 5.5A Id (Tc) for reliable power switching.
• Low Gate Charge (Qg): 10nC (at 10V) reduces switching losses, enhancing efficiency in high-frequency applications.
• Low Input Capacitance (Ciss): 320pF (at 100V) ensures fast switching and reduced gate drive requirements.
• Optimized Thermal Performance: 60W power dissipation (Tc) and 150°C max junction temperature (TJ) for sustained operation under load.
• Robust Construction: TO-220 through-hole package offers mechanical durability and efficient heat dissipation.
• Compliance & Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for environmental and handling resilience.

STPP9N60M2 Applications

The STP9N60M2 excels in:

• Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters and offline flyback designs.
• Motor Drives & Inverters: Efficient control in industrial and automotive systems.
• Lighting Solutions: LED drivers and ballast circuits requiring high-voltage switching.
• Energy Management: Power factor correction (PFC) and renewable energy systems.
  Its low Rds(on) and Qg make it particularly suitable for high-frequency switching, while its thermal resilience ensures longevity in compact, high-power designs.

Conclusion of STP9N60M2

The STP9N60M2 combines high-voltage capability, low losses, and thermal efficiency, making it a standout choice for power electronics engineers. Its MDmesh™ II Plus technology delivers a competitive edge over conventional MOSFETs, particularly in applications demanding fast switching and energy efficiency. With STMicroelectronics' proven reliability and compliance with global standards, this MOSFET is a robust solution for modern power systems.

STP9N60M2 Documents

Download datasheets and manufacturer documentation for STP9N60M2

Datasheets :

ST(D,P,U)9N60M2      

HTML Datasheet :

ST(D,P,U)9N60M2