STMicroelectronics_STP5N95K5

STMicroelectronics
STP5N95K5  
Single FETs, MOSFETs

STMicroelectronics
STP5N95K5
278-STP5N95K5
Ersa
STMicroelectronics-STP5N95K5-datasheets-12799901.pdf
MOSFET N-CH 950V 3.5A TO220
In Stock : 461

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STP5N95K5 Description

STP5N95K5 Description

The STP5N95K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain to source voltage (Vdss) of 950V and a continuous drain current (Id) of 3.5A at 25°C, this N-Channel device offers robust performance in demanding electronic systems.

STP5N95K5 Features

  • High Voltage Tolerance: The STP5N95K5 can handle a maximum drain to source voltage of 950V, making it suitable for high-voltage applications.
  • High Current Handling: Capable of handling a continuous drain current of 3.5A at 25°C, this MOSFET is ideal for applications requiring high current flow.
  • Low On-Resistance: With a maximum Rds On of 2.5Ω at 1.5A and 10V, this device minimizes power dissipation and enhances efficiency.
  • Robust Gate Charge: A maximum gate charge (Qg) of 12.5nC at 10V ensures fast switching capabilities.
  • Wide Voltage Range: Operates within a wide voltage range, with a maximum gate-source voltage (Vgs) of ±30V.
  • Compliance: This device is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring environmental and regulatory compliance.
  • Package: The STP5N95K5 is available in a through-hole TO220 package, facilitating easy integration into various electronic designs.

STP5N95K5 Applications

The STP5N95K5 is well-suited for a variety of applications where high voltage and current handling are required:

  • Power Electronics: Ideal for power supply designs, motor controls, and other high-voltage power management systems.
  • Industrial Automation: Reliable in applications involving motor drives and industrial control systems that demand high voltage and current.
  • Automotive Electronics: Suitable for automotive applications such as electric power steering and battery management systems.
  • Renewable Energy: Can be used in solar inverters and wind power systems where high voltage and current are critical.

Conclusion of STP5N95K5

The STP5N95K5 from STMicroelectronics stands out for its ability to handle high voltage and current, making it an excellent choice for power electronics, industrial automation, automotive, and renewable energy applications. Its robust performance, compliance with environmental regulations, and ease of integration make it a preferred option in the electronics industry.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP5N95K5 Documents

Download datasheets and manufacturer documentation for STP5N95K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STx5N95K5      
Ersa STx5N95K5      

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