STMicroelectronics_STP12N65M5
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STMicroelectronics
STP12N65M5

278-STP12N65M5
PDF Datasheet
650V 8.5A N-CH MOSFET TO-220 390mR
13 Weeks

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
390mR
Drain to Source Voltage (Vdss)
650V
Fall Time
23.4ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
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STP12N65M5 Description

STP12N65M5 Description

The STP12N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8.5A at 25°C, this device is well-suited for a variety of power electronics applications. The STP12N65M5 features a low on-resistance (Rds On) of 430mOhm at 4.3A and 10V, ensuring minimal power dissipation and high efficiency. Its maximum gate-source voltage (Vgs) is ±25V, providing flexibility in gate drive requirements.

STP12N65M5 Features

  • High Voltage Rating: The STP12N65M5 boasts a drain-to-source voltage (Vdss) of 650V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an Rds On of 430mOhm at 4.3A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Current Handling: Capable of handling continuous drain currents up to 8.5A at 25°C, the STP12N65M5 is ideal for power electronics applications.
  • Flexible Gate Drive: A maximum gate-source voltage (Vgs) of ±25V allows for compatibility with various gate drive circuits.
  • Low Gate Charge: The maximum gate charge (Qg) of 22nC at 10V contributes to fast switching and reduced switching losses.
  • High-Temperature Operation: The STP12N65M5 can operate at junction temperatures up to 150°C, making it suitable for demanding environments.

STP12N65M5 Applications

The STP12N65M5 is well-suited for a variety of applications where high voltage, low on-resistance, and robust current handling are required. Some specific use cases include:

  • Power Supplies: The STP12N65M5's high voltage rating and low on-resistance make it ideal for power supply designs, particularly in applications requiring high efficiency and low power dissipation.
  • Motor Control: This MOSFET's ability to handle high currents and voltages makes it suitable for motor control applications, where precise control and high power handling are essential.
  • Industrial Automation: The STP12N65M5's robust performance characteristics make it a reliable choice for industrial automation systems, where high voltage and current handling are often required.

Conclusion of STP12N65M5

The STP12N65M5 from STMicroelectronics is a powerful N-Channel MOSFET designed for high-voltage and high-current applications. Its combination of low on-resistance, high voltage rating, and robust current handling make it an ideal choice for power supplies, motor control, and industrial automation systems. With its flexible gate drive and low gate charge, the STP12N65M5 offers efficient switching and reduced switching losses, making it a reliable and high-performance solution for demanding power electronics applications.

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