STMicroelectronics_STP12N65M5

STMicroelectronics
STP12N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP12N65M5
278-STP12N65M5
Ersa
STMicroelectronics-STP12N65M5-datasheets-4764744.pdf
MOSFET N-CH 650V 8.5A TO220AB
In Stock : 1

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STP12N65M5 Description

STP12N65M5 Description

The STP12N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8.5A at 25°C, this device is well-suited for a variety of power electronics applications. The STP12N65M5 features a low on-resistance (Rds On) of 430mOhm at 4.3A and 10V, ensuring minimal power dissipation and high efficiency. Its maximum gate-source voltage (Vgs) is ±25V, providing flexibility in gate drive requirements.

STP12N65M5 Features

  • High Voltage Rating: The STP12N65M5 boasts a drain-to-source voltage (Vdss) of 650V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an Rds On of 430mOhm at 4.3A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Current Handling: Capable of handling continuous drain currents up to 8.5A at 25°C, the STP12N65M5 is ideal for power electronics applications.
  • Flexible Gate Drive: A maximum gate-source voltage (Vgs) of ±25V allows for compatibility with various gate drive circuits.
  • Low Gate Charge: The maximum gate charge (Qg) of 22nC at 10V contributes to fast switching and reduced switching losses.
  • High-Temperature Operation: The STP12N65M5 can operate at junction temperatures up to 150°C, making it suitable for demanding environments.

STP12N65M5 Applications

The STP12N65M5 is well-suited for a variety of applications where high voltage, low on-resistance, and robust current handling are required. Some specific use cases include:

  • Power Supplies: The STP12N65M5's high voltage rating and low on-resistance make it ideal for power supply designs, particularly in applications requiring high efficiency and low power dissipation.
  • Motor Control: This MOSFET's ability to handle high currents and voltages makes it suitable for motor control applications, where precise control and high power handling are essential.
  • Industrial Automation: The STP12N65M5's robust performance characteristics make it a reliable choice for industrial automation systems, where high voltage and current handling are often required.

Conclusion of STP12N65M5

The STP12N65M5 from STMicroelectronics is a powerful N-Channel MOSFET designed for high-voltage and high-current applications. Its combination of low on-resistance, high voltage rating, and robust current handling make it an ideal choice for power supplies, motor control, and industrial automation systems. With its flexible gate drive and low gate charge, the STP12N65M5 offers efficient switching and reduced switching losses, making it a reliable and high-performance solution for demanding power electronics applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP12N65M5 Documents

Download datasheets and manufacturer documentation for STP12N65M5

Ersa STx12N65M5      
Ersa STP12N65M5 View All Specifications      
Ersa STx12N65M5      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service