STMicroelectronics_STL110N10F7

STMicroelectronics
STL110N10F7  
Single FETs, MOSFETs

STMicroelectronics
STL110N10F7
278-STL110N10F7
Ersa
STMicroelectronics-STL110N10F7-datasheets-6461850.pdf
MOSFET N-CH 100V 107A POWERFLAT
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    STL110N10F7 Description

    The STL110N10F7 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is a N-channel enhancement mode device, which means that it is turned on by applying a positive gate-source voltage.

    Description:

    The STL110N10F7 is a high-power MOSFET designed for applications that require high efficiency and low on-state resistance. It is available in a TO-220F package, which is suitable for a wide range of power electronic applications.

    Features:

    1. N-channel, enhancement mode device
    2. High-power capability
    3. Low on-state resistance (RDS(on))
    4. High switching speed
    5. High input impedance
    6. Suitable for use in a wide range of power electronic applications

    Applications:

    The STL110N10F7 is suitable for a wide range of applications that require high-power switching and efficient operation. Some of the potential applications for this device include:

    1. Motor control
    2. Power supplies
    3. Inverters
    4. Battery chargers
    5. DC-DC converters
    6. Class D audio amplifiers
    7. Renewable energy systems, such as solar panel power conditioning

    In summary, the STL110N10F7 is a high-power MOSFET from STMicroelectronics that is designed for use in a wide range of power electronic applications. Its features, such as low on-state resistance and high switching speed, make it a suitable choice for applications that require efficient and reliable power switching.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL110N10F7 Documents

    Download datasheets and manufacturer documentation for STL110N10F7

    Ersa STL110N10F7      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STL110N10F7      

    Shopping Guide

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