STMicroelectronics_STP7NK80Z

STMicroelectronics
STP7NK80Z  
Single FETs, MOSFETs

STMicroelectronics
STP7NK80Z
278-STP7NK80Z
MOSFET N-CH 800V 5.2A TO220AB
In Stock : 703

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    STP7NK80Z Description

    STP7NK80Z Description

    The STP7NK80Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This device features an 800V drain-to-source voltage (Vdss) rating, making it suitable for high-voltage applications. The STP7NK80Z is part of the SuperMESH™ series, known for its excellent performance and reliability.

    STP7NK80Z Features

    • High Voltage Rating: The STP7NK80Z boasts an 800V drain-to-source voltage rating, making it ideal for high-voltage applications.
    • High Current Capability: With a continuous drain current (Id) of 5.2A at 25°C, the STP7NK80Z can handle significant current loads.
    • Low On-Resistance: The device has a maximum on-resistance (Rds On) of 1.8Ω at 2.6A and 10V, ensuring low power dissipation and high efficiency.
    • Robust Gate Drive: The STP7NK80Z has a maximum gate-source voltage (Vgs) of ±30V, providing robust gate drive capabilities.
    • Low Gate Charge: The device has a maximum gate charge (Qg) of 56nC at 10V, contributing to fast switching speeds and low power consumption.
    • Environmental Compliance: The STP7NK80Z is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
    • Moisture Sensitivity Level: With an MSL of 1, the device is suitable for a wide range of applications without concerns about moisture sensitivity.

    STP7NK80Z Applications

    The STP7NK80Z is ideal for various high-voltage and high-current applications, including:

    1. Power Supplies: The high voltage rating and low on-resistance make it suitable for power supply designs.
    2. Motor Controls: The device's ability to handle high currents and voltages makes it ideal for motor control applications.
    3. Industrial Automation: The STP7NK80Z can be used in industrial automation systems requiring high voltage and current capabilities.
    4. RF Power Amplifiers: The device's high voltage and current ratings make it suitable for RF power amplifier applications.

    Conclusion of STP7NK80Z

    The STP7NK80Z is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current, and low on-resistance. Its robust gate drive, low gate charge, and environmental compliance make it an excellent choice for a wide range of high-voltage and high-current applications. The STP7NK80Z's unique features and advantages over similar models make it an ideal choice for power supplies, motor controls, industrial automation, and RF power amplifier applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP7NK80Z Documents

    Download datasheets and manufacturer documentation for STP7NK80Z

    Ersa Product Change Notification 2024-12-04 (PDF)       TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

    Shopping Guide

    Payment Methods
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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service