STMicroelectronics_STWA50N65DM2AG

STMicroelectronics
STWA50N65DM2AG  
Single FETs, MOSFETs

STMicroelectronics
STWA50N65DM2AG
278-STWA50N65DM2AG
Ersa
STMicroelectronics-STWA50N65DM2AG-datasheets-6467018.pdf
MOSFET N-CH 650V 38A TO247
In Stock : 10356

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STWA50N65DM2AG Description

STWA50N65DM2AG Description

The STWA50N65DM2AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding automotive applications. This MOSFET is built on the advanced MDmesh™ DM2 series, ensuring superior performance and reliability. With a drain-to-source voltage rating of 650V and a continuous drain current of 38A at 25°C, the STWA50N65DM2AG is capable of handling high-power applications efficiently.

STWA50N65DM2AG Features

  • High Drain-to-Source Voltage (Vdss): 650V, making it suitable for high-voltage applications.
  • Continuous Drain Current (Id): 38A at 25°C, ensuring robust current handling capabilities.
  • Low Rds On: 87mOhm at 19A, 10V, contributing to high efficiency and low power loss.
  • Gate Charge (Qg): 69nC at 10V, enabling fast switching and reduced switching losses.
  • Input Capacitance (Ciss): 3200pF at 100V, providing fast response times.
  • Maximum Gate-to-Source Voltage (Vgs): ±25V, offering flexibility in gate drive requirements.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications.
  • RoHS3 Compliant: Ensuring environmental compliance and sustainability.
  • Moisture Sensitivity Level (MSL): 1, indicating unlimited storage time before reflow soldering.

STWA50N65DM2AG Applications

The STWA50N65DM2AG is ideal for a variety of high-power automotive applications, including:

  • Electric Vehicle (EV) Inverters: Due to its high voltage and current ratings, it is well-suited for inverter applications in electric and hybrid vehicles.
  • DC-DC Converters: Its low Rds On and high efficiency make it an excellent choice for DC-DC converters in automotive systems.
  • Motor Controls: The STWA50N65DM2AG can be used in motor control applications, providing precise control and high efficiency.
  • Power Management Systems: Its robust performance and automotive grade rating make it suitable for power management in various automotive systems.

Conclusion of STWA50N65DM2AG

The STWA50N65DM2AG from STMicroelectronics stands out as a high-performance, automotive-grade MOSFET. Its unique combination of high voltage and current ratings, low Rds On, and fast switching capabilities make it an excellent choice for demanding automotive applications. Its compliance with RoHS3 and REACH standards, along with its moisture sensitivity level, further enhance its appeal for environmentally conscious and reliability-focused designs. The STWA50N65DM2AG is a powerful component for engineers looking to push the boundaries of performance and efficiency in their automotive projects.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STWA50N65DM2AG Documents

Download datasheets and manufacturer documentation for STWA50N65DM2AG

Ersa Wafer 15/Feb/2019      
Ersa STWA50N65DM2AG      

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