STMicroelectronics_STP17NF25

STMicroelectronics
STP17NF25  
Single FETs, MOSFETs

STMicroelectronics
STP17NF25
278-STP17NF25
Ersa
STMicroelectronics-STP17NF25-datasheets-12012455.pdf
MOSFET N-CH 250V 17A TO220AB
In Stock : 2656

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STP17NF25 Description

STP17NF25 Description

The STP17NF25 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to deliver exceptional performance in various electronic applications. With a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 17A at 25°C, this MOSFET is well-suited for high-power applications. The device features a low on-resistance (Rds On) of 165mOhm at 8.5A and 10V, ensuring efficient power dissipation and minimal power loss. The STP17NF25 is manufactured using advanced MOSFET technology, ensuring high reliability and performance.

STP17NF25 Features

  • Low On-Resistance (Rds On): 165mOhm at 8.5A and 10V, ensuring efficient power dissipation and minimal power loss.
  • High Drain-to-Source Voltage (Vdss): 250V, suitable for high-power applications.
  • Continuous Drain Current (Id): 17A at 25°C, providing high current handling capability.
  • Low Gate Threshold Voltage (Vgs(th)): 4V at 250µA, ensuring easy gate drive and low power consumption.
  • Low Gate Charge (Qg): 29.5 nC at 10V, reducing switching losses and improving efficiency.
  • Robust Input Capacitance (Ciss): 1000 pF at 25V, providing fast response times and high-frequency operation.
  • Compliance with Industry Standards: RoHS3 compliant, REACH unaffected, and moisture sensitivity level (MSL) 1, ensuring environmental and safety compliance.
  • Package Type: Through-hole TO220AB, providing easy integration and mounting in various applications.

STP17NF25 Applications

The STP17NF25 is ideal for a wide range of applications where high power, efficiency, and reliability are critical. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the STP17NF25 is well-suited for power supply applications, such as switching power supplies and battery chargers.
  2. Motor Control: The device's high current handling capability and low on-resistance make it ideal for motor control applications, including brushless DC motors and stepper motors.
  3. Industrial Automation: The STP17NF25's robust performance and compliance with industry standards make it suitable for industrial automation applications, such as robotics and control systems.
  4. Automotive Applications: The device's high voltage and current ratings, along with its low on-resistance, make it suitable for automotive applications, such as electric vehicle charging and power management systems.

Conclusion of STP17NF25

The STP17NF25 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current, and low on-resistance, making it ideal for a wide range of high-power applications. Its robust performance, compliance with industry standards, and ease of integration make it a preferred choice for power supplies, motor control, industrial automation, and automotive applications. With its advanced MOSFET technology and STMicroelectronics' reputation for quality, the STP17NF25 is a reliable and efficient solution for demanding electronic applications.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Maximum Drain Source Resistance (MOhm)
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Typical Output Capacitance (pF)
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Package Length
Series
Operating Junction Temperature (°C)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP17NF25 Documents

Download datasheets and manufacturer documentation for STP17NF25

Ersa STP17NF25      
Ersa STP17NF25 View All Specifications      
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