The STW34NB20 from STMicroelectronics is a 200V N-channel PowerMESH™ MOSFET designed for high-efficiency power switching applications. With a continuous drain current (Id) of 34A (at Tc=25°C) and a low on-resistance (Rds(on)) of 75mΩ at 10V gate drive, this device minimizes conduction losses, making it ideal for high-power designs. The MOSFET operates within a wide temperature range (up to 150°C junction temperature) and features a robust ±30V gate-source voltage (Vgs) tolerance, ensuring reliability in demanding environments. Although marked as obsolete, its performance characteristics remain competitive for legacy or specific industrial applications.
The STW34NB20 offers a balance of high voltage tolerance, low on-resistance, and robust thermal performance, making it a strong candidate for power electronics despite its obsolete status. Its PowerMESH™ technology ensures efficient switching, while the TO-247-3 package aids in heat management. While newer alternatives may exist, this MOSFET remains viable for industrial, automotive, and renewable energy applications where legacy compatibility or specific performance thresholds are required. Designers should evaluate replacement options but can leverage its proven reliability for existing systems.
Download datasheets and manufacturer documentation for STW34NB20