STMicroelectronics_STL56N3LLH5

STMicroelectronics
STL56N3LLH5  
Single FETs, MOSFETs

STMicroelectronics
STL56N3LLH5
278-STL56N3LLH5
Ersa
STMicroelectronics-STL56N3LLH5-datasheets-1024893.pdf
MOSFET N-CH 30V 56A POWERFLAT
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STL56N3LLH5 Description

STL56N3LLH5 Description

The STL56N3LLH5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding applications that require efficient power management and control. This N-Channel MOSFET features a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 56A at 25°C. With a maximum power dissipation of 62.5W and a low on-resistance (Rds On) of 9mOhm, the STL56N3LLH5 offers exceptional performance and efficiency.

STL56N3LLH5 Features

  • High Input Capacitance (Ciss): The STL56N3LLH5 boasts an impressive maximum input capacitance of 950 pF at 25V, ensuring fast switching speeds and reduced power consumption.
  • Low Gate Charge (Qg): With a maximum gate charge of 6.5 nC at 4.5V, this MOSFET minimizes power loss during switching, improving overall efficiency.
  • Robust Construction: The PowerFlat™ (5x6) package provides excellent thermal performance and mechanical stability, making it ideal for high-power applications.
  • Compliance and Standards: The STL56N3LLH5 is REACH unaffected, RoHS3 compliant, and classified as EAR99, ensuring compliance with international regulations and standards.
  • Low Vgs(th): A maximum threshold voltage (Vgs(th)) of 1V at 250µA ensures reliable operation and easy drive capability.

STL56N3LLH5 Applications

The STL56N3LLH5 is well-suited for a variety of high-power applications, including:

  • Power Supplies: Its high current handling and low on-resistance make it ideal for power supply designs, where efficiency and reliability are critical.
  • Motor Control: The STL56N3LLH5's robust construction and low gate charge make it suitable for motor control applications, where high current and fast switching are required.
  • Industrial Automation: In industrial automation systems, the STL56N3LLH5 can be used for controlling high-power loads, such as actuators and motors, with precision and efficiency.

Conclusion of STL56N3LLH5

The STL56N3LLH5 is a powerful and efficient MOSFET from STMicroelectronics, offering a combination of high current handling, low on-resistance, and fast switching capabilities. Its unique features, such as high input capacitance and low gate charge, make it an excellent choice for demanding applications in power supplies, motor control, and industrial automation. With its compliance with international standards and robust construction, the STL56N3LLH5 is a reliable and high-performance solution for engineers looking to optimize their designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL56N3LLH5 Documents

Download datasheets and manufacturer documentation for STL56N3LLH5

Ersa STL56N3LLH5      
Ersa Box Label Chg 28/Jul/2016      
Ersa STL56N3LLH5 View All Specifications      
Ersa STL56N3LLH5      

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