STMicroelectronics_STB200NF03T4

STMicroelectronics
STB200NF03T4  
Single FETs, MOSFETs

STMicroelectronics
STB200NF03T4
278-STB200NF03T4
MOSFET N-CH 30V 120A D2PAK
In Stock : 4820

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STB200NF03T4 Description

STB200NF03T4 Description

The STB200NF03T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high power dissipation and robust performance. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 120A at 25°C, this MOSFET is well-suited for applications such as motor control, power supplies, and industrial electronics.

STB200NF03T4 Features

  • Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the STB200NF03T4 offers superior performance and reliability.
  • Low On-Resistance: With a maximum Rds(on) of 3.6mOhm at 60A and 10V, this MOSFET minimizes power losses and improves efficiency.
  • High Input Capacitance: The maximum input capacitance (Ciss) of 4950 pF at 25V ensures fast switching speeds and reduced noise.
  • Low Gate Charge: The maximum gate charge (Qg) of 140 nC at 10V reduces switching losses and improves overall efficiency.
  • Robust Voltage Ratings: The maximum gate-source voltage (Vgs) of ±20V and drain-to-source voltage (Vdss) of 30V provide a wide operating range.
  • Power Dissipation: Capable of handling up to 300W of power dissipation, this MOSFET is ideal for high-power applications.
  • Mounting Type: Surface mount design for easy integration into PCB layouts.
  • Package: D2PAK package provides a compact and efficient solution for space-constrained designs.

STB200NF03T4 Applications

The STB200NF03T4 is an excellent choice for a variety of high-power applications, including:

  • Motor Control: Its high current and voltage ratings make it suitable for electric motor drives and control systems.
  • Power Supplies: The STB200NF03T4 can be used in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Industrial Electronics: Its robust performance and power dissipation capabilities make it ideal for industrial control systems and automation equipment.
  • Automotive Applications: The STB200NF03T4 can be used in various automotive electronics, such as electric power steering (EPS) systems and battery management systems.

Conclusion of STB200NF03T4

The STB200NF03T4 from STMicroelectronics is a powerful and versatile N-Channel MOSFET that offers exceptional performance and reliability for high-power applications. Its low on-resistance, high input capacitance, and robust voltage ratings make it an ideal choice for motor control, power supplies, and industrial electronics. With its compact D2PAK package and surface mount design, the STB200NF03T4 is a space-efficient solution for demanding applications where performance and reliability are critical.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STB200NF03T4 Documents

Download datasheets and manufacturer documentation for STB200NF03T4

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa ST(B,P)200NF03(-1)      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB200NF03 View All Specifications      
Ersa ST(B,P)200NF03(-1)      
Ersa D2PAK Lead Modification 04/Oct/2013      

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