STMicroelectronics

STW65N65DM2AG  

Single FETs, MOSFETs

STW65N65DM2AG is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The STW65N65DM2AG is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 65A. It features a low on-state resistance (RDS(on)) of 0.08 Ohms maximum at a gate-source voltage (VGS) of 10V, making it suitable for high efficiency power switching applications.

Features:

• N-channel, enhancement mode MOSFET
• Drain-source voltage (VDS) of 650V
• Continuous drain current (ID) of 65A
• Low on-state resistance (RDS(on)) of 0.08 Ohms maximum at VGS = 10V
• Fast switching capability
• High input impedance
• Logic level gate drive compatible

Applications:

• Power switching and amplification in power electronics circuits
• Motor control and drive applications
• High voltage power supplies
• Battery charging and management systems
• Renewable energy systems, such as solar panel power conditioning and energy storage systems
• Industrial control and automation systems

The STW65N65DM2AG is available in a TO-220AB package, making it suitable for use in a wide range of applications where high voltage and current handling capabilities are required. Its fast switching capability and low on-state resistance make it an ideal choice for power switching applications where efficiency and performance are critical.

STW65N65DM2AG Documents

Download datasheets and manufacturer documentation for STW65N65DM2AG

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