The STW21N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C, this device is well-suited for demanding power electronics applications. The STW21N65M5 features a low on-resistance (Rds On) of 190mOhm at 8.5A and 10V, ensuring efficient power dissipation and minimal power loss. The device is packaged in a through-hole TO247-3 package, making it suitable for a wide range of applications.
The STW21N65M5 is ideal for a variety of power electronics applications, including:
The STW21N65M5 is a robust and reliable N-Channel MOSFET from STMicroelectronics, offering high voltage and current handling capabilities in a compact TO247-3 package. Its low on-resistance and high input capacitance make it an excellent choice for power electronics applications requiring efficient power dissipation and minimal power loss. While the device is now considered obsolete, it remains a popular choice for its unique combination of performance benefits and versatility in various applications.
Download datasheets and manufacturer documentation for STW21N65M5