STMicroelectronics_STW21N65M5

STMicroelectronics
STW21N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW21N65M5
278-STW21N65M5
Ersa
STMicroelectronics-STW21N65M5-datasheets-13568618.pdf
MOSFET N-CH 650V 17A TO247-3
In Stock : 74

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STW21N65M5 Description

STW21N65M5 Description

The STW21N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C, this device is well-suited for demanding power electronics applications. The STW21N65M5 features a low on-resistance (Rds On) of 190mOhm at 8.5A and 10V, ensuring efficient power dissipation and minimal power loss. The device is packaged in a through-hole TO247-3 package, making it suitable for a wide range of applications.

STW21N65M5 Features

  • N-Channel MOSFET with 650V drain-to-source voltage (Vdss)
  • Continuous drain current (Id) of 17A at 25°C
  • Low on-resistance (Rds On) of 190mOhm at 8.5A and 10V
  • High input capacitance (Ciss) of 1950 pF at 100V
  • Low gate charge (Qg) of 50 nC at 10V
  • Maximum gate-source voltage (Vgs) of ±25V
  • RoHS3 compliant, REACH unaffected, and moisture sensitivity level (MSL) of 1
  • Operating temperature range of -55°C to 150°C (TJ)
  • Drive voltage of 10V for maximum Rds On and minimum Rds On
  • Power dissipation of 125W (Tc)

STW21N65M5 Applications

The STW21N65M5 is ideal for a variety of power electronics applications, including:

  1. Motor control and drives
  2. Power supplies and converters
  3. Renewable energy systems, such as solar inverters and wind power inverters
  4. Industrial automation and control systems
  5. Automotive electronics, including electric vehicle charging systems

Conclusion of STW21N65M5

The STW21N65M5 is a robust and reliable N-Channel MOSFET from STMicroelectronics, offering high voltage and current handling capabilities in a compact TO247-3 package. Its low on-resistance and high input capacitance make it an excellent choice for power electronics applications requiring efficient power dissipation and minimal power loss. While the device is now considered obsolete, it remains a popular choice for its unique combination of performance benefits and versatility in various applications.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STW21N65M5 Documents

Download datasheets and manufacturer documentation for STW21N65M5

Ersa STx21N65M5      
Ersa STx21N65M5      

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