STMicroelectronics_STP38N65M5

STMicroelectronics
STP38N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP38N65M5
278-STP38N65M5
Ersa
STMicroelectronics-STP38N65M5-datasheets-10535474.pdf
MOSFET N-CH 650V 30A TO220
In Stock : 585

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STP38N65M5 Description

STP38N65M5 Description

The STP38N65M5 is a high-performance MOSFET N-CH 650V 30A TO220 transistor manufactured by STMicroelectronics. This single FET is designed for applications requiring high voltage and current capabilities. With a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 30A at 25°C, the STP38N65M5 delivers exceptional performance in demanding electronic systems.

STP38N65M5 Features

  • Technology: MOSFET (Metal Oxide) - Offers high efficiency and fast switching capabilities.
  • Input Capacitance (Ciss): 3000 pF @ 100V - Minimizes input capacitance for faster response times.
  • Gate Charge (Qg): 71 nC @ 10V - Reduces switching losses and improves efficiency.
  • Rds On (Max): 95mOhm @ 15A, 10V - Provides low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 5V @ 250µA - Ensures reliable gate threshold voltage for consistent operation.
  • Operating Temperature: 150°C (TJ) - Suitable for high-temperature applications.
  • Mounting Type: Through Hole - Facilitates easy integration into existing designs.
  • Package: Tube - Protects the device during shipping and handling.

STP38N65M5 Applications

The STP38N65M5 is ideal for a variety of high-voltage and high-current applications, including:

  1. Power Supplies: Its high Vdss and Id ratings make it suitable for power supply designs requiring high voltage and current handling capabilities.
  2. Industrial Control Systems: The STP38N65M5's robust performance and high temperature rating make it ideal for use in industrial control systems where reliability and durability are critical.
  3. Automotive Applications: The device's high voltage and current ratings, along with its ability to operate at high temperatures, make it suitable for automotive applications such as electric vehicle charging systems and power electronics.

Conclusion of STP38N65M5

The STP38N65M5 from STMicroelectronics is a powerful MOSFET N-CH 650V 30A TO220 transistor designed for high-voltage and high-current applications. Its unique combination of low on-resistance, high input capacitance, and robust performance make it an excellent choice for power supplies, industrial control systems, and automotive applications. With its high temperature rating and through-hole mounting, the STP38N65M5 offers a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP38N65M5 Documents

Download datasheets and manufacturer documentation for STP38N65M5

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