STMicroelectronics_STP31N65M5

STMicroelectronics
STP31N65M5  
Single FETs, MOSFETs

STMicroelectronics
STP31N65M5
278-STP31N65M5
Ersa
STMicroelectronics-STP31N65M5-datasheets-10347362.pdf
MOSFET N-CH 650V 22A TO220
In Stock : 766

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STP31N65M5 Description

STP31N65M5 Description

The STP31N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. This MOSFET is part of the MDmesh™ V series and is manufactured using advanced technology to ensure optimal performance and reliability. With a maximum drain-source voltage of 650V and a continuous drain current of 22A at 25°C, the STP31N65M5 is well-suited for various power electronics applications.

STP31N65M5 Features

  • High Voltage and Current Handling: The STP31N65M5 can handle a maximum drain-source voltage of 650V and a continuous drain current of 22A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 148mΩ at 11A and 10V, the STP31N65M5 offers low conduction losses, improving efficiency in power conversion systems.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: The maximum gate charge (Qg) is 45nC at 10V, which contributes to faster switching speeds and reduced switching losses.
  • Environmental Compliance: The STP31N65M5 is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious designs.
  • Moisture Sensitivity Level (MSL) 1: This indicates that the device can be stored and handled without special precautions, simplifying the manufacturing process.

STP31N65M5 Applications

The STP31N65M5 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STP31N65M5 is well-suited for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Controls: The low on-resistance and high current handling capabilities make the STP31N65M5 an excellent choice for motor control applications, including industrial motor drives and electric vehicle (EV) motor controls.
  • Renewable Energy Systems: The STP31N65M5 can be used in solar inverters and wind turbine power conversion systems, where high voltage and current ratings are critical.
  • Industrial Automation: In applications requiring high power and precision control, such as robotic actuators and servo drives, the STP31N65M5 provides reliable performance.

Conclusion of STP31N65M5

The STP31N65M5 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET that offers a combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive. Its compliance with environmental regulations and moisture sensitivity level make it an excellent choice for a wide range of power electronics applications, including power supplies, motor controls, renewable energy systems, and industrial automation. With its advanced features and performance benefits, the STP31N65M5 stands out as a reliable and efficient solution for demanding power electronic designs.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP31N65M5 Documents

Download datasheets and manufacturer documentation for STP31N65M5

Ersa STx31N65M5      
Ersa STP31N65M5 View All Specifications      
Ersa STx31N65M5      

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