STMicroelectronics_STP31N65M5
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STMicroelectronics
STP31N65M5

278-STP31N65M5
PDF Datasheet
650V 22A N-CH MOSFET TO-220 148mR Rds(on)
14 Weeks

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
148mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
148mR
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
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STP31N65M5 Description

STP31N65M5 Description

The STP31N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. This MOSFET is part of the MDmesh™ V series and is manufactured using advanced technology to ensure optimal performance and reliability. With a maximum drain-source voltage of 650V and a continuous drain current of 22A at 25°C, the STP31N65M5 is well-suited for various power electronics applications.

STP31N65M5 Features

  • High Voltage and Current Handling: The STP31N65M5 can handle a maximum drain-source voltage of 650V and a continuous drain current of 22A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 148mΩ at 11A and 10V, the STP31N65M5 offers low conduction losses, improving efficiency in power conversion systems.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: The maximum gate charge (Qg) is 45nC at 10V, which contributes to faster switching speeds and reduced switching losses.
  • Environmental Compliance: The STP31N65M5 is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious designs.
  • Moisture Sensitivity Level (MSL) 1: This indicates that the device can be stored and handled without special precautions, simplifying the manufacturing process.

STP31N65M5 Applications

The STP31N65M5 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STP31N65M5 is well-suited for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Controls: The low on-resistance and high current handling capabilities make the STP31N65M5 an excellent choice for motor control applications, including industrial motor drives and electric vehicle (EV) motor controls.
  • Renewable Energy Systems: The STP31N65M5 can be used in solar inverters and wind turbine power conversion systems, where high voltage and current ratings are critical.
  • Industrial Automation: In applications requiring high power and precision control, such as robotic actuators and servo drives, the STP31N65M5 provides reliable performance.

Conclusion of STP31N65M5

The STP31N65M5 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET that offers a combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive. Its compliance with environmental regulations and moisture sensitivity level make it an excellent choice for a wide range of power electronics applications, including power supplies, motor controls, renewable energy systems, and industrial automation. With its advanced features and performance benefits, the STP31N65M5 stands out as a reliable and efficient solution for demanding power electronic designs.

FAQ

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STP31N65M5 has an operating temperature range of 150°C.
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