The STF33N60DM6 from STMicroelectronics is a high-performance N-channel 600V MOSFET belonging to the MDmesh™ M6 series, optimized for efficiency and robustness in power electronics. Designed with Metal Oxide Semiconductor (MOSFET) technology, it delivers a continuous drain current (Id) of 25A (Tc) and features an ultra-low on-resistance (Rds(on)) of 128mΩ at 10V gate drive, minimizing conduction losses. Its 600V drain-to-source voltage (Vdss) rating makes it suitable for high-voltage switching applications. Packaged in a TO-220FP through-hole format, it ensures reliable thermal performance with a maximum power dissipation of 35W (Tc).
The STF33N60DM6 stands out as a high-efficiency, high-voltage MOSFET ideal for power electronics demanding low conduction losses, fast switching, and thermal reliability. Its MDmesh™ M6 technology and optimized gate charge make it superior to conventional MOSFETs in applications like SMPS, motor drives, and renewable energy systems. With STMicroelectronics' proven quality and compliance, this MOSFET is a dependable choice for engineers designing next-generation power solutions.
Download datasheets and manufacturer documentation for STF33N60DM6