STMicroelectronics

STB23NM50N  

Single FETs, MOSFETs

STB23NM50N Description

The STB23NM50N from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built on the advanced MDmesh™ II technology, it offers a robust 500V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 17A at 25°C (Tc). This surface-mount device (D2PAK package) features a low on-resistance (Rds(on)) of 190mOhm at 10V gate drive, ensuring efficient power handling with minimal conduction losses. Its high power dissipation capability (125W) and wide operating temperature range (-55°C to 150°C TJ) make it suitable for harsh environments.

STB23NM50N Features

• Low Gate Charge (Qg): 45nC @ 10V reduces switching losses, improving efficiency in high-frequency applications.
• High Input Capacitance (Ciss): 1330pF @ 50V ensures stable switching performance.
• Enhanced Ruggedness: ±25V gate-source voltage (Vgs) tolerance provides robustness against voltage spikes.
• Optimized for Fast Switching: Low Vgs(th) of 4V @ 250µA ensures quick turn-on/off transitions.
• Reliable Packaging: Supplied in Tape & Reel (TR) for automated assembly, with MSL1 (Unlimited) moisture sensitivity for long shelf life.
• Compliance: ROHS3 and REACH unaffected, meeting global environmental standards.

STB23NM50N Applications

• Switched-Mode Power Supplies (SMPS): Ideal for AC-DC converters, PFC stages, and DC-DC converters due to high voltage tolerance and low Rds(on).
• Motor Control: Efficiently drives brushless DC (BLDC) motors in industrial and automotive systems.
• Lighting Solutions: Suitable for LED drivers and HID ballasts requiring high efficiency.
• Renewable Energy: Used in solar inverters and battery management systems for reliable power switching.
• Industrial Automation: Supports high-current switching in PLCs and motor drives.

Conclusion of STB23NM50N

The STB23NM50N stands out for its high voltage rating, low conduction losses, and rugged design, making it a top choice for power electronics engineers. Its MDmesh™ II technology ensures superior performance in high-frequency, high-efficiency applications. Whether in SMPS, motor drives, or renewable energy systems, this MOSFET delivers reliability, efficiency, and thermal stability, backed by STMicroelectronics' quality assurance.

STB23NM50N Documents

Download datasheets and manufacturer documentation for STB23NM50N

PCN Assembly/Origin :

IPG-PWR/14/8603 21/Jul/2014      

Datasheets :

STx23NM50N      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

Other Related Documents :

STB23NM50N View All Specifications      

HTML Datasheet :

STx23NM50N      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013