STMicroelectronics

STD11N65M2  

Single FETs, MOSFETs

STD11N65M2 Description

The STD11N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C, this device is well-suited for demanding power electronics applications.

STD11N65M2 Features

• High Voltage and Current Ratings: The STD11N65M2 boasts a drain-to-source voltage of 650V and can handle continuous drain currents up to 7A at 25°C, making it ideal for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 670mOhm at 3.5A and 10V, this MOSFET offers low power dissipation and high efficiency in switching applications.
• Fast Switching Speed: The STD11N65M2 has a low gate charge (Qg) of 12.5nC at 10V, enabling fast switching and reducing power losses.
• Robust Construction: Housed in a DPAK package, this device is designed for surface mount applications and can dissipate up to 85W of power.
• Compliance and Certifications: The STD11N65M2 is REACH unaffected, RoHS3 compliant, and classified as EAR99, ensuring compliance with international regulations.

STD11N65M2 Applications

The STD11N65M2's high voltage and current ratings, along with its low on-resistance and fast switching capabilities, make it an excellent choice for a variety of power electronics applications, including:

• Power Supplies: Ideal for high-voltage power supply designs, where efficient switching and low power dissipation are critical.
• Motor Controls: Suitable for motor drive applications, where high voltage and current ratings are necessary to control motor speed and torque.
• Industrial Automation: Reliable for use in industrial automation systems, where high power and robustness are required.
• Renewable Energy: Can be used in renewable energy applications, such as solar inverters and wind power systems, where high voltage and current ratings are essential.

Conclusion of STD11N65M2

The STD11N65M2 from STMicroelectronics is a powerful N-Channel MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust construction, compliance with international regulations, and suitability for a wide range of power electronics applications make it an excellent choice for designers looking to improve efficiency and performance in their high-power designs.

STD11N65M2 Documents

Download datasheets and manufacturer documentation for STD11N65M2

PCN Assembly/Origin :

Mult Dev Wafer Site Add 3/Aug/2018      

Datasheets :

ST(D, P, U)11N65M2      

PCN Packaging :

Reel Design Change 22/Aug/2022      

HTML Datasheet :

ST(D, P, U)11N65M2