STMicroelectronics_STF26N60M2

STMicroelectronics
STF26N60M2  
Single FETs, MOSFETs

STMicroelectronics
STF26N60M2
278-STF26N60M2
Ersa
STMicroelectronics-STF26N60M2-datasheets-6749714.pdf
MOSFET N-CH 600V 20A TO220FP
In Stock : 990

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STF26N60M2 Description

STF26N60M2 Description

The STF26N60M2 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for demanding power applications. It features a robust TO220FP package, ensuring efficient heat dissipation and reliable operation. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C, this N-Channel device delivers exceptional performance in various power electronics applications.

STF26N60M2 Features

  • 600V Drain-to-Source Voltage (Vdss): Provides high voltage capability for use in demanding power applications.
  • 20A Continuous Drain Current (Id) @ 25°C: Offers high current handling capacity for efficient power management.
  • 165mOhm Rds On (Max) @ 11A, 10V: Ensures low on-resistance for minimal power loss and high efficiency.
  • 4V Vgs(th) (Max) @ 250µA: Facilitates easy gate drive and control.
  • ±25V Vgs (Max): Allows for a wide range of gate voltage compatibility.
  • 30W Power Dissipation (Max) (Tc): Enables operation in high-power applications.
  • MDmesh™ Series: Offers superior performance and reliability compared to standard MOSFETs.
  • REACH Unaffected and ROHS3 Compliant: Ensures environmental compliance and sustainability.

STF26N60M2 Applications

The STF26N60M2 is ideal for a wide range of applications where high voltage and current handling are required. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the STF26N60M2 is well-suited for power supply designs, including SMPS (Switched-Mode Power Supplies) and linear regulators.
  2. Industrial Automation: Its robustness and high power dissipation make it ideal for motor control and drive applications in industrial settings.
  3. Electric Vehicles (EVs): The STF26N60M2 can be used in EV charging systems and power management circuits, leveraging its high voltage and current capabilities.
  4. Renewable Energy Systems: Solar inverters and wind turbine power electronics can benefit from the STF26N60M2's high voltage and current ratings, ensuring efficient energy conversion and management.

Conclusion of STF26N60M2

The STF26N60M2 from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its unique features, such as the MDmesh™ technology, provide superior performance and reliability compared to standard MOSFETs. With its high Vdss, Id, and power dissipation capabilities, the STF26N60M2 is an excellent choice for power supplies, industrial automation, electric vehicles, and renewable energy systems. Its REACH unaffected and ROHS3 compliant status further enhances its appeal for environmentally conscious applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF26N60M2 Documents

Download datasheets and manufacturer documentation for STF26N60M2

Ersa Spice Model Tutorial for Power MOSFETS       STF(I)26N60M2 Datasheet      
Ersa STF26N60M2 PSpice Model      
Ersa Spice Model Tutorial for Power MOSFETS       STF(I)26N60M2 Datasheet      

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