STMicroelectronics_STY112N65M5
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STMicroelectronics
STY112N65M5

278-STY112N65M5
PDF Datasheet
650V 96A N-CH MOSFET TO-247 19mR Rds(on)
26 Weeks

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Tech Specifications

Package/Case
TO-247-3
Continuous Drain Current (ID)
96A
Drain to Source Breakdown Voltage
710V
Drain to Source Resistance
19mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
22MR
Fall Time
140ns
Gate to Source Voltage (Vgs)
25V
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STY112N65M5 Description

STY112N65M5 Description

The STY112N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current capabilities. This MOSFET features a drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of up to 96A at 25°C. With a maximum power dissipation of 625W, the STY112N65M5 is well-suited for high-power applications.

STY112N65M5 Features

  • High Voltage and Current Ratings: The STY112N65M5 boasts a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 96A at 25°C, making it ideal for high-voltage and high-current applications.
  • Low On-Resistance: With a maximum Rds(on) of 22mOhm at 47A and 10V, the STY112N65M5 offers low on-resistance, reducing power losses and improving efficiency in power conversion applications.
  • Robust Gate Drive: The MOSFET features a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation with various gate drive circuits.
  • High-Temperature Operation: The STY112N65M5 can operate at junction temperatures up to 150°C, making it suitable for applications with high thermal loads.
  • Environmental Compliance: This MOSFET is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations and reducing the environmental impact of electronic products.

STY112N65M5 Applications

The STY112N65M5 is ideal for a wide range of high-voltage and high-current applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STY112N65M5 is well-suited for power supply designs, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Industrial Automation: The MOSFET's robustness and high-power capabilities make it suitable for motor control and drives in industrial automation systems.
  • Renewable Energy: The STY112N65M5 can be used in solar inverters and wind power converters, where high voltage and current ratings are essential.
  • Electric Vehicles: This MOSFET can be used in electric vehicle (EV) charging systems and powertrain control, where high voltage and current ratings are critical.

Conclusion of STY112N65M5

The STY112N65M5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage, current ratings, and low on-resistance, making it ideal for demanding applications in power supplies, industrial automation, renewable energy, and electric vehicles. Its robustness, environmental compliance, and high-temperature operation further enhance its suitability for these applications, providing a reliable and efficient solution for high-power electronics.

FAQ

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The standard lead time for STY112N65M5 is 26 Weeks.
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