STMicroelectronics

STH410N4F7-6AG  

Single FETs, MOSFETs

STH410N4F7-6AG Description

The STH410N4F7-6AG is a high-performance MOSFET N-CH 40V 200A H2PAK-6 from STMicroelectronics. This device is designed for applications requiring high power and efficiency. With its advanced technology and features, it offers superior performance and reliability in various electronic systems.

STH410N4F7-6AG Features

• Technology: MOSFET (Metal Oxide) - Provides excellent switching performance and low on-resistance.
• Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V - Ensures fast switching and minimal power loss.
• Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V - Minimizes gate charge, reducing switching losses.
• Drain to Source Voltage (Vdss): 40 V - Suitable for high-voltage applications.
• Power Dissipation (Max): 365W (Tc) - Capable of handling high power loads.
• Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V - Offers low on-resistance for efficient power delivery.
• Vgs(th) (Max) @ Id: 4.5V @ 250µA - Ensures reliable threshold voltage performance.
• Series: STripFET™ F7 - A family of high-efficiency MOSFETs with advanced features.
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc) - Capable of handling high continuous currents.
• Drive Voltage (Max Rds On, Min Rds On): 10V - Facilitates easy integration with various control circuits.

STH410N4F7-6AG Applications

The STH410N4F7-6AG is ideal for applications requiring high power and efficiency, such as:

1. Automotive Systems: Due to its automotive grade and high power capabilities, it is suitable for use in electric and hybrid vehicle systems, including battery management, motor control, and power conversion.
2. Industrial Control: Its high power dissipation and low on-resistance make it suitable for motor drives, power supplies, and other high-power industrial applications.
3. Renewable Energy: The STH410N4F7-6AG can be used in solar inverters, wind power systems, and other renewable energy applications requiring high efficiency and reliability.

Conclusion of STH410N4F7-6AG

The STH410N4F7-6AG from STMicroelectronics is a high-performance MOSFET designed for demanding applications requiring high power and efficiency. Its advanced features, such as low on-resistance, high power dissipation, and fast switching capabilities, make it an ideal choice for automotive, industrial control, and renewable energy systems. With its automotive grade and compliance with RoHS3 standards, the STH410N4F7-6AG offers a reliable and environmentally friendly solution for high-power electronic systems.

STH410N4F7-6AG Documents

Download datasheets and manufacturer documentation for STH410N4F7-6AG

PCN Assembly/Origin :

Mult Dev A/T Chgs 14/Mar/2023      

Datasheets :

STH410N4F7-2AG, STH410N4F7-6AG      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

STH410N4F7-2AG, STH410N4F7-6AG      

PCN Design/Specification :

StripFET Datasheet Update 8/Apr/2019