STMicroelectronics_STH13N120K5-2AG

STMicroelectronics
STH13N120K5-2AG  
Single FETs, MOSFETs

STMicroelectronics
STH13N120K5-2AG
278-STH13N120K5-2AG
Ersa
STMicroelectronics-STH13N120K5-2AG-datasheets-4177199.pdf
MOSFET N-CH 1200V 12A H2PAK-2
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    STH13N120K5-2AG Description

    STMicroelectronics' STH13N120K5-2AG is a high-power, high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications.

    Description:

    The STH13N120K5-2AG is a N-channel MOSFET with a drain-source voltage (Vds) of 1200 volts and a continuous drain current (Id) of 5.5 amps. It is available in a TO-220AB package, which is suitable for use in a wide range of power electronic applications.

    Features:

    • High voltage and current ratings: The STH13N120K5-2AG has a high drain-source voltage (Vds) of 1200 volts and a continuous drain current (Id) of 5.5 amps, making it suitable for use in high-power applications.
    • Low on-state resistance (RDS(on)): The STH13N120K5-2AG has a low on-state resistance (RDS(on)) of 0.55 ohms (maximum), which helps to minimize power dissipation and improve efficiency in power electronic circuits.
    • High switching speed: The STH13N120K5-2AG has a fast switching speed, with a typical gate charge (Qg) of 45nC and a gate-source threshold voltage (Vgs(th)) of 3V to 4V. This makes it suitable for use in high-frequency applications.
    • Robustness: The STH13N120K5-2AG is designed to be robust and reliable, with features such as an avalanche energy rating of 150 Joules and a double avalanche test of 500 Joules.

    Applications:

    The STH13N120K5-2AG is suitable for use in a wide range of power electronic applications, including:

    • Motor control: The high voltage and current ratings make the STH13N120K5-2AG suitable for use in motor control applications, such as in industrial motor drives and electric vehicles.
    • Power supplies: The STH13N120K5-2AG can be used in power supply applications, such as in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    • Renewable energy: The STH13N120K5-2AG can be used in renewable energy applications, such as in solar panel inverters and wind turbine converters.
    • Battery management: The STH13N120K5-2AG can be used in battery management systems, such as in battery chargers and battery protection circuits.

    Overall, the STH13N120K5-2AG is a high-power, high-voltage MOSFET that offers a combination of high performance, robustness, and reliability, making it suitable for use in a wide range of power electronic applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STH13N120K5-2AG Documents

    Download datasheets and manufacturer documentation for STH13N120K5-2AG

    Ersa STH13N120K5-2AG 23/Dec/2022      
    Ersa STH13N120K5-2AG      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      

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