The STP6N80K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high power and voltage handling. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 800V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 4.5A at 25°C, the STP6N80K5 can handle significant power dissipation, up to 85W (Tc). The device is mounted through-hole in a TO220 package, making it ideal for applications where space is limited.
STP6N80K5 Features
High Voltage Handling: The STP6N80K5 can handle drain-to-source voltages up to 800V, making it suitable for high-voltage applications.
High Current Capability: With a continuous drain current of 4.5A at 25°C, the STP6N80K5 can handle significant power dissipation.
Low On-Resistance: The device has a maximum on-resistance (Rds On) of 1.6Ω at 2A, 10V, ensuring efficient power transfer.
Low Gate Charge: The maximum gate charge (Qg) is 7.5nC at 10V, reducing switching losses and improving efficiency.
Robust Construction: The device is mounted through-hole in a TO220 package, providing a robust and reliable solution for high-voltage applications.
Compliance: The STP6N80K5 is REACH unaffected, RoHS3 compliant, and EAR99 classified, ensuring compliance with environmental and trade regulations.
STP6N80K5 Applications
The STP6N80K5 is ideal for a wide range of high-voltage and high-power applications, including:
Power Supplies: The high voltage and current ratings make it suitable for power supply designs.
Motor Drives: The device's high voltage and current capabilities make it suitable for motor drive applications.
Industrial Control: The STP6N80K5 can be used in industrial control systems requiring high voltage and current handling.
Automotive Applications: The device's high voltage and current ratings make it suitable for automotive applications, such as electric vehicle charging systems.
Conclusion of STP6N80K5
The STP6N80K5 is a high-performance MOSFET from STMicroelectronics, offering high voltage and current handling capabilities in a robust through-hole TO220 package. Its low on-resistance, low gate charge, and compliance with environmental and trade regulations make it an ideal choice for a wide range of high-voltage and high-power applications. With its unique features and advantages, the STP6N80K5 stands out as a reliable and efficient solution for demanding applications in power supplies, motor drives, industrial control, and automotive systems.
Tech Specifications
Configuration
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP6N80K5 Documents
Download datasheets and manufacturer documentation for STP6N80K5
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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