The STF140N6F7 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the STripFET™ series, it features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 70A at 25°C, making it suitable for high-current switching. With an ultra-low on-resistance (Rds(on)) of just 3.5mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing efficiency in power systems. Its 175°C maximum junction temperature (TJ) and 33W power dissipation (Tc) ensure robust thermal performance in harsh environments. Packaged in a TO-220FP through-hole format, it is optimized for ease of assembly and heat dissipation.
This MOSFET excels in:
The STF140N6F7 combines low Rds(on), high current capability, and superior thermal performance, making it a standout choice for power electronics. Its STripFET™ technology ensures reliability in high-stress environments, while the TO-220FP package simplifies thermal management. Whether in industrial, automotive, or renewable energy systems, this MOSFET delivers efficiency, durability, and compliance with global standards. Engineers seeking a high-efficiency, high-power switching solution will find the STF140N6F7 an optimal fit.
Download datasheets and manufacturer documentation for STF140N6F7