STMicroelectronics_STF6N65K3

STMicroelectronics
STF6N65K3  
Single FETs, MOSFETs

STMicroelectronics
STF6N65K3
278-STF6N65K3
Ersa
STMicroelectronics-STF6N65K3-datasheets-11955995.pdf
MOSFET N-CH 650V 5.4A TO220FP
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    STF6N65K3 Description

    STF6N65K3 Description

    The STF6N65K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching capabilities. This MOSFET operates at a drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 5.4A at 25°C. With a maximum power dissipation of 30W and an operating temperature range up to 150°C, the STF6N65K3 is well-suited for demanding power electronic applications.

    STF6N65K3 Features

    • High Voltage and Current Ratings: The STF6N65K3 boasts a drain-to-source voltage (Vdss) of 650V and can handle a continuous drain current (Id) of 5.4A at 25°C, making it ideal for high-power applications.
    • Low On-Resistance: With a maximum on-resistance (Rds On) of 1.3Ω at 2.8A and 10V, the STF6N65K3 offers efficient power dissipation and reduced power losses.
    • Fast Switching Speed: The device features a low gate charge (Qg) of 35nC at 10V and a threshold voltage (Vgs(th)) of 4.5V at 50µA, enabling fast switching and reduced switching losses.
    • Robust Construction: The STF6N65K3 is housed in a TO220FP package, providing a robust and reliable solution for high-power applications.
    • Compliance and Environmental: The device is compliant with RoHS3 and REACH regulations, ensuring environmental compatibility and adherence to industry standards.

    STF6N65K3 Applications

    The STF6N65K3 is an excellent choice for a variety of high-power applications, including:

    • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, particularly in industrial and automotive applications.
    • Motor Control: The low on-resistance and fast switching capabilities make it ideal for motor control applications, such as electric vehicles and industrial motor drives.
    • Inverters: The STF6N65K3 can be used in inverter designs for renewable energy systems, such as solar and wind power inverters.
    • Industrial Automation: The device's robust construction and high-power handling capabilities make it suitable for industrial automation applications, such as robotics and control systems.

    Conclusion of STF6N65K3

    The STF6N65K3 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust construction, compliance with environmental regulations, and suitability for a wide range of high-power applications make it an ideal choice for demanding power electronic designs. With its unique features and advantages over similar models, the STF6N65K3 is a reliable and efficient solution for power supply, motor control, inverter, and industrial automation applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STF6N65K3 Documents

    Download datasheets and manufacturer documentation for STF6N65K3

    Ersa STx(x)6N65K3      
    Ersa STF6N65K3 View All Specifications      
    Ersa STx(x)6N65K3      

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