The STF40N65M2 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using ST's advanced MDmesh™ M2 technology, it delivers an optimal balance of low on-resistance (99mΩ @ 16A, 10V) and high switching efficiency, making it ideal for high-voltage, high-current environments. With a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 32A (Tc), this MOSFET is engineered to handle significant power loads while maintaining thermal stability up to 150°C (TJ). Packaged in a TO220FP through-hole format, it ensures robust mechanical and thermal performance in industrial and automotive applications.
The STF40N65M2 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its MDmesh™ M2 technology ensures superior switching performance and thermal management, while its 650V rating and 32A current capability make it versatile for industrial, automotive, and energy applications. With low Rds(on), fast switching, and robust packaging, it is an excellent choice for designers seeking to optimize power density and system reliability.
Download datasheets and manufacturer documentation for STF40N65M2