STMicroelectronics_STF40N65M2

STMicroelectronics
STF40N65M2  
Single FETs, MOSFETs

STMicroelectronics
STF40N65M2
278-STF40N65M2
Ersa
STMicroelectronics-STF40N65M2-datasheets-2310442.pdf
MOSFET N-CH 650V 32A TO220FP
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STF40N65M2 Description

STF40N65M2 Description

The STF40N65M2 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using ST's advanced MDmesh™ M2 technology, it delivers an optimal balance of low on-resistance (99mΩ @ 16A, 10V) and high switching efficiency, making it ideal for high-voltage, high-current environments. With a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 32A (Tc), this MOSFET is engineered to handle significant power loads while maintaining thermal stability up to 150°C (TJ). Packaged in a TO220FP through-hole format, it ensures robust mechanical and thermal performance in industrial and automotive applications.

STF40N65M2 Features

  • Low On-Resistance: 99mΩ @ 16A, 10V minimizes conduction losses, improving efficiency.
  • High Voltage Rating: 650V Vdss ensures reliability in high-power circuits.
  • Fast Switching: Gate charge (Qg) of 56.5nC @ 10V and low input capacitance (2355pF @ 100V) enhance switching speed.
  • Thermal Robustness: 25W power dissipation (Tc) and a wide operating temperature range (-55°C to 150°C) suit harsh environments.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.
  • Drive Flexibility: Vgs(max) of ±25V and a threshold voltage (Vgs(th)) of 4V @ 250µA ensure compatibility with various gate drivers.

STF40N65M2 Applications

  • Switched-Mode Power Supplies (SMPS): High efficiency and low losses make it ideal for AC/DC converters.
  • Motor Drives: Robust performance supports inverter and motor control systems.
  • Industrial Power Systems: Suitable for welding equipment, UPS, and solar inverters.
  • Automotive Electronics: Used in electric vehicle (EV) charging and DC-DC converters.
  • Lighting: Efficiently drives high-power LED drivers and ballasts.

Conclusion of STF40N65M2

The STF40N65M2 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its MDmesh™ M2 technology ensures superior switching performance and thermal management, while its 650V rating and 32A current capability make it versatile for industrial, automotive, and energy applications. With low Rds(on), fast switching, and robust packaging, it is an excellent choice for designers seeking to optimize power density and system reliability.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF40N65M2 Documents

Download datasheets and manufacturer documentation for STF40N65M2

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