STMicroelectronics_STF100N10F7

STMicroelectronics
STF100N10F7  
Single FETs, MOSFETs

STMicroelectronics
STF100N10F7
278-STF100N10F7
Ersa
STMicroelectronics-STF100N10F7-datasheets-7178539.pdf
MOSFET N CH 100V 45A TO-220FP
In Stock : 2161

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STF100N10F7 Description

STF100N10F7 Description

The STF100N10F7 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-source voltage rating of 100V and continuous drain current of 45A at 25°C, this MOSFET is ideal for use in various power electronic applications. The device is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability.

STF100N10F7 Features

  • High Voltage and Current Ratings: The STF100N10F7 can handle drain-source voltages up to 100V and continuous drain currents up to 45A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 8mΩ at 22.5A and 10V gate-source voltage, the STF100N10F7 offers low conduction losses, improving overall efficiency.
  • High Input Capacitance: The device features a maximum input capacitance of 4369pF at 50V, providing fast switching performance.
  • Low Gate Charge: The maximum gate charge is 61nC at 10V gate-source voltage, enabling fast switching and reducing power dissipation.
  • Robust Package: The STF100N10F7 is packaged in a TO-220FP package, providing excellent thermal performance and mechanical robustness.
  • Compliance with Regulations: The device is compliant with RoHS3 and REACH regulations, making it suitable for use in environmentally conscious applications.

STF100N10F7 Applications

The STF100N10F7 is ideal for a wide range of power electronic applications, including:

  1. Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  2. Motor Control: The low on-resistance and fast switching capabilities make it an excellent choice for motor control applications, including electric vehicles (EVs) and industrial motor drives.
  3. Inverters: The STF100N10F7 can be used in inverter designs for renewable energy systems, such as solar and wind power inverters.
  4. Industrial Automation: The device's robustness and high performance make it suitable for use in industrial automation applications, such as servo drives and robotics.

Conclusion of STF100N10F7

The STF100N10F7 is a high-performance N-channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust package and compliance with environmental regulations make it an excellent choice for a wide range of power electronic applications. With its advanced features and performance benefits, the STF100N10F7 is a reliable and efficient solution for demanding power electronic designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF100N10F7 Documents

Download datasheets and manufacturer documentation for STF100N10F7

Ersa Assembly Site 03/Oct/2023      
Ersa STx100N10F7 DataSheet      
Ersa STx100N10F7 DataSheet      

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