STMicroelectronics_STF28N60DM2

STMicroelectronics
STF28N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STF28N60DM2
278-STF28N60DM2
Ersa
STMicroelectronics-STF28N60DM2-datasheets-8486274.pdf
MOSFET N-CH 600V 21A TO220FP
In Stock : 562

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STF28N60DM2 Description

STF28N60DM2 Description

The STF28N60DM2 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics. It features an N-CH 600V drain to source voltage, capable of handling a continuous drain current of 21A at 25°C. With a maximum power dissipation of 30W at Tc, this device is designed for demanding applications that require high efficiency and reliability.

STF28N60DM2 Features

  • 600V Drain to Source Voltage (Vdss): Provides robust voltage handling capabilities for various power electronics applications.
  • 21A Continuous Drain Current (Id) @ 25°C: Delivers high current capacity, making it suitable for power switching and amplification tasks.
  • 30W Maximum Power Dissipation (Tc): Ensures reliable operation in high-power applications.
  • Low Rds On (Max) of 160mOhm @ 10.5A, 10V: Offers high efficiency and low power loss in the on-state.
  • 5V Vgs(th) (Max) @ 250µA: Facilitates easy gate drive and control.
  • 1500 pF Input Capacitance (Ciss) (Max) @ 100 V: Minimizes parasitic effects, improving overall performance.
  • 34 nC Gate Charge (Qg) (Max) @ 10 V: Reduces switching losses and improves efficiency.
  • ±25V Vgs (Max): Allows for a wide range of gate voltage operation.
  • Through Hole Mounting Type: Provides mechanical stability and ease of integration in various circuit designs.
  • TO220FP Package: Offers a compact form factor for space-constrained applications.
  • REACH Unaffected and ROHS3 Compliant: Ensures environmental compliance and sustainability.
  • Moisture Sensitivity Level (MSL) 1 (Unlimited): Allows for extended storage without compromising device performance.

STF28N60DM2 Applications

The STF28N60DM2 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, it is suitable for power switching and amplification in power supplies, motor drives, and inverters.
  2. Industrial Control: Its robust performance makes it suitable for motor control and protection circuits in industrial automation systems.
  3. Automotive: The device's high voltage and current capabilities make it suitable for automotive applications such as electric power steering and battery management systems.
  4. Renewable Energy: Its high efficiency and reliability make it an excellent choice for solar inverters and wind energy systems.

Conclusion of STF28N60DM2

The STF28N60DM2 from STMicroelectronics is a versatile and high-performance MOSFET that offers a unique combination of high voltage, current, and power ratings. Its low Rds On, low gate charge, and compact package make it an ideal choice for demanding applications in power electronics, industrial control, automotive, and renewable energy. With its REACH unaffected and ROHS3 compliant status, the STF28N60DM2 is not only a high-performance device but also an environmentally friendly option for your next project.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF28N60DM2 Documents

Download datasheets and manufacturer documentation for STF28N60DM2

Ersa STF28N60DM2      
Ersa STF28N60DM2      

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