STMicroelectronics_STD3N65M6

STMicroelectronics
STD3N65M6  
Single FETs, MOSFETs

STMicroelectronics
STD3N65M6
278-STD3N65M6
Ersa
STMicroelectronics-STD3N65M6-datasheets-3160824.pdf
MOSFET N-CH 650V DPAK
In Stock : 1860

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STD3N65M6 Description

STD3N65M6 Description

The STD3N65M6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 3.5A at 25°C, this N-channel device is well-suited for demanding power electronics applications.

STD3N65M6 Features

  • High Voltage Rating: The STD3N65M6 boasts a drain-to-source voltage (Vdss) of 650V, making it ideal for high-voltage applications.
  • Low On-Resistance: With a maximum Rds(on) of 1.5Ω at 1.75A and 10V, this MOSFET offers low conduction losses, improving efficiency in power conversion systems.
  • Low Gate Charge: A maximum gate charge (Qg) of 6nC at 10V reduces switching losses, enhancing the device's performance in high-frequency applications.
  • Robust Power Dissipation: Capable of withstanding up to 45W of power dissipation (Tc), the STD3N65M6 is designed for high-power applications.
  • Surface Mount Technology: The DPAK package allows for surface mount installation, providing a compact and reliable solution for space-constrained designs.
  • Compliance and Certifications: The STD3N65M6 is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring regulatory compliance in various markets.

STD3N65M6 Applications

The STD3N65M6 is an excellent choice for a variety of power electronics applications, including:

  • Power Supplies: Its high voltage rating and low on-resistance make it suitable for power supply designs, where efficiency and reliability are critical.
  • Motor Control: The device's robust power handling capabilities and low gate charge make it ideal for motor control applications, ensuring precise and efficient motor operation.
  • Industrial Automation: In industrial automation systems, the STD3N65M6 can be used for controlling high-power loads, such as actuators and motors, with high efficiency and reliability.
  • Renewable Energy Systems: The device's high voltage and power ratings make it suitable for use in renewable energy systems, such as solar inverters and wind power converters.

Conclusion of STD3N65M6

The STD3N65M6 from STMicroelectronics is a powerful and efficient MOSFET, designed to meet the demands of high-voltage and high-power applications. Its unique combination of low on-resistance, low gate charge, and high power dissipation capabilities make it an ideal choice for power supplies, motor control, industrial automation, and renewable energy systems. With its compliance with REACH and RoHS regulations, the STD3N65M6 is a reliable and environmentally friendly solution for a wide range of power electronics applications.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
RoHS
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Tradename
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
USHTS
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STD3N65M6 Documents

Download datasheets and manufacturer documentation for STD3N65M6

Ersa PROCESS CHANGE NOTIFICATION (PDF)       Product Change Notification (PDF)      

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