STMicroelectronics_STB3NK60ZT4

STMicroelectronics
STB3NK60ZT4  
Single FETs, MOSFETs

STMicroelectronics
STB3NK60ZT4
278-STB3NK60ZT4
MOSFET N-CH 600V 2.4A D2PAK
In Stock : 3272

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STB3NK60ZT4 Description

STB3NK60ZT4 Description

The STB3NK60ZT4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching. This MOSFET is part of the SuperMESH™ series, known for its excellent performance and reliability. With a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2.4A at 25°C, the STB3NK60ZT4 is well-suited for various power electronics applications.

STB3NK60ZT4 Features

  • High Drain-Source Voltage (Vdss): 600V, making it suitable for high-voltage applications.
  • Continuous Drain Current (Id): 2.4A at 25°C, ensuring efficient power handling.
  • Low On-Resistance (Rds On): 3.6Ω at 1.2A and 10V, minimizing power loss during operation.
  • Gate Charge (Qg): 11.8nC at 10V, contributing to fast switching and reduced power consumption.
  • Input Capacitance (Ciss): 311pF at 25V, enabling high-speed operation.
  • Robust Gate Voltage (Vgs): ±30V, providing flexibility in circuit design.
  • D2PAK Package: Surface-mount package for easy integration into PCB designs.
  • Active Status: Currently in production, ensuring availability for new designs.
  • REACH Unaffected and RoHS3 Compliant: Ensuring environmental and regulatory compliance.

STB3NK60ZT4 Applications

The STB3NK60ZT4 is ideal for applications where high voltage and current handling are required, combined with the need for efficient power management. Some specific use cases include:

  • Power Supplies: In switch-mode power supplies (SMPS) and power conversion circuits.
  • Motor Controls: For electric vehicles, industrial automation, and robotics where high voltage and current are involved.
  • Renewable Energy Systems: In solar inverters and wind power systems for efficient energy conversion.
  • Automotive Electronics: For electric power steering, battery management systems, and other high-voltage automotive applications.

Conclusion of STB3NK60ZT4

The STB3NK60ZT4 from STMicroelectronics stands out for its high drain-source voltage, low on-resistance, and fast switching capabilities. Its D2PAK package and compliance with REACH and RoHS regulations make it a versatile choice for a wide range of power electronics applications. With its active status and robust performance, the STB3NK60ZT4 is a reliable component for designers looking to enhance the efficiency and reliability of their high-voltage electronic systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Pd - Power Dissipation
USHTS

STB3NK60ZT4 Documents

Download datasheets and manufacturer documentation for STB3NK60ZT4

Ersa STB3NK60Z      
Ersa STB11NK40Z View All Specifications      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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