STMicroelectronics_STF33N60M2
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STMicroelectronics
STF33N60M2

278-STF33N60M2
PDF Datasheet
600V 26A N-CH MOSFET TO-220FP 108mR RdsOn
16 Weeks

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
26A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
108mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
16.4mm
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STF33N60M2 Description

STMicroelectronics' STF33N60M2 is a high-performance, high-voltage N-channel MOSFET designed for use in a wide range of applications. Here is a description of the model, its features, and potential applications:

Model Description:

The STF33N60M2 is an N-channel enhancement mode field-effect transistor (MOSFET) provided in a TO-220 package. It is designed to offer high efficiency and robust performance in various power electronic applications.

Features:

  1. High Voltage Rating: The STF33N60M2 can handle a maximum drain-source voltage (VDS) of up to 600V, making it suitable for high-voltage applications.
  2. Low On-State Resistance (RDS(on)): With a typical RDS(on) of 0.65 ohms at a gate-source voltage (VGS) of 10V, the MOSFET offers low conduction losses, which is beneficial for energy-efficient designs.
  3. High Input Impedance: The high input impedance of the gate allows for easy drive and control of the MOSFET.
  4. Robust Design: The device features a ruggedized structure that can withstand high energy pulses and transients, making it suitable for use in harsh environments.
  5. Thermal Performance: The TO-220 package provides good thermal dissipation properties, allowing the device to operate effectively in high-temperature applications.
  6. Logic Level Gate Drive: The STF33N60M2 can be easily driven by standard logic level signals, simplifying the design of control circuits.

Applications:

  1. Motor Drives: The STF33N60M2 can be used in motor control applications, such as in industrial machinery and automotive systems, due to its high voltage and current handling capabilities.
  2. Power Supplies: The MOSFET is suitable for use in switch mode power supplies (SMPS) and other power conversion applications, where high efficiency and low power losses are desired.
  3. Inverters: The STF33N60M2 can be used in inverter circuits for renewable energy systems, such as solar panel installations, where high-voltage switching is required.
  4. UPS Systems: The MOSFET can be used in uninterruptible power supply (UPS) systems to provide reliable and efficient power during outages or fluctuations in the main power supply.
  5. Industrial Control: The device can be used in various industrial control applications, such as in programmable logic controllers (PLCs) and other control systems, where high-voltage switching is necessary.
  6. Battery Management Systems: The STF33N60M2 can be used in battery management systems for electric vehicles or energy storage systems, where high-voltage and high-current switching is required.

The STF33N60M2 is a versatile and robust MOSFET that can be used in a wide range of power electronic applications, providing high performance and reliability.

FAQ

What is the standard lead time for STF33N60M2?
The standard lead time for STF33N60M2 is 16 Weeks.
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Availability (In Stock : 5845 )
Quantity Unit Price Ext. Price
10+ $1.35428 $13.54
50+ $1.20857 $60.43
100+ $1.04400 $104.40
500+ $0.97028 $485.14
1000+ $0.93772 $937.72
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