The STP21N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This device is part of the MDmesh™ V series, offering superior performance in various electronic systems. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C, the STP21N65M5 is well-suited for high-voltage, high-current applications.
STP21N65M5 Features
High Voltage and Current Ratings: The STP21N65M5 boasts a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C, making it ideal for high-voltage, high-current applications.
Low On-Resistance: With a maximum Rds(on) of 190mΩ at 8.5A and 10V, the STP21N65M5 offers low on-resistance for efficient power dissipation.
Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
Low Gate Charge: The STP21N65M5 features a maximum gate charge (Qg) of 50nC at 10V, contributing to fast switching speeds and reduced power losses.
Thermal Management: The device can dissipate up to 125W of power (Tc), making it suitable for applications with high thermal demands.
Environmental Compliance: The STP21N65M5 is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
Moisture Sensitivity Level (MSL): With an MSL of 1, the device is suitable for a wide range of manufacturing and storage conditions.
STP21N65M5 Applications
The STP21N65M5 is ideal for various high-voltage, high-current applications, including:
Power Supplies: The high voltage and current ratings make it suitable for power supply designs, such as switching power supplies and battery chargers.
Industrial Control: The device's robust performance and thermal management capabilities make it ideal for motor drives and industrial control systems.
Automotive Applications: The STP21N65M5 can be used in automotive applications, such as electric vehicle charging systems and power management circuits.
Renewable Energy Systems: The device's high voltage and current ratings make it suitable for solar inverters and wind energy systems.
Conclusion of STP21N65M5
The STP21N65M5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior performance in high-voltage, high-current applications. With its robust specifications, low on-resistance, and environmental compliance, the STP21N65M5 is an excellent choice for power supplies, industrial control systems, automotive applications, and renewable energy systems. Its unique features and advantages make it a preferred choice over similar models in the market.
Tech Specifications
Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STP21N65M5 Documents
Download datasheets and manufacturer documentation for STP21N65M5
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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