STMicroelectronics_STP21N65M5
original

STMicroelectronics
STP21N65M5

278-STP21N65M5
PDF Datasheet
650V 17A N-CH MOSFET TO-220 150mR Power Transistor
14 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
1.95nF
Show More

STP21N65M5 Description

STP21N65M5 Description

The STP21N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This device is part of the MDmesh™ V series, offering superior performance in various electronic systems. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C, the STP21N65M5 is well-suited for high-voltage, high-current applications.

STP21N65M5 Features

  • High Voltage and Current Ratings: The STP21N65M5 boasts a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 17A at 25°C, making it ideal for high-voltage, high-current applications.
  • Low On-Resistance: With a maximum Rds(on) of 190mΩ at 8.5A and 10V, the STP21N65M5 offers low on-resistance for efficient power dissipation.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: The STP21N65M5 features a maximum gate charge (Qg) of 50nC at 10V, contributing to fast switching speeds and reduced power losses.
  • Thermal Management: The device can dissipate up to 125W of power (Tc), making it suitable for applications with high thermal demands.
  • Environmental Compliance: The STP21N65M5 is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.
  • Moisture Sensitivity Level (MSL): With an MSL of 1, the device is suitable for a wide range of manufacturing and storage conditions.

STP21N65M5 Applications

The STP21N65M5 is ideal for various high-voltage, high-current applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, such as switching power supplies and battery chargers.
  • Industrial Control: The device's robust performance and thermal management capabilities make it ideal for motor drives and industrial control systems.
  • Automotive Applications: The STP21N65M5 can be used in automotive applications, such as electric vehicle charging systems and power management circuits.
  • Renewable Energy Systems: The device's high voltage and current ratings make it suitable for solar inverters and wind energy systems.

Conclusion of STP21N65M5

The STP21N65M5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior performance in high-voltage, high-current applications. With its robust specifications, low on-resistance, and environmental compliance, the STP21N65M5 is an excellent choice for power supplies, industrial control systems, automotive applications, and renewable energy systems. Its unique features and advantages make it a preferred choice over similar models in the market.

FAQ

What is STP21N65M5?
STP21N65M5 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
Are there related or alternative parts for STP21N65M5?
What operating temperature range does STP21N65M5 support?
What package or case is STP21N65M5 available in?
Is STP21N65M5 currently in stock?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ