STMicroelectronics_STW43N60DM2

STMicroelectronics
STW43N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STW43N60DM2
278-STW43N60DM2
Ersa
STMicroelectronics-STW43N60DM2-datasheets-13501960.pdf
MOSFET N-CH 600V 34A TO247
In Stock : 699

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STW43N60DM2 Description

STW43N60DM2 Description

The STW43N60DM2 is a high-performance MOSFET N-CH 600V 34A TO247 from STMicroelectronics, designed for demanding applications that require high power dissipation and efficient switching. This device leverages advanced MOSFET technology to deliver superior performance and reliability.

STW43N60DM2 Features

  • Input Capacitance (Ciss): The STW43N60DM2 boasts an ultra-low input capacitance of 2500 pF @ 100 V, enabling fast switching speeds and reduced power consumption.
  • Gate Charge (Qg): With a maximum gate charge of 56 nC @ 10 V, this MOSFET offers efficient gate control and reduced gate driver requirements.
  • Drain to Source Voltage (Vdss): Capable of handling voltages up to 600 V, the STW43N60DM2 is suitable for high-voltage applications.
  • Power Dissipation: The device can dissipate up to 250W (Tc), making it ideal for power electronics.
  • Rds On (Max): The STW43N60DM2 achieves a low on-resistance of 93mOhm @ 17A, 10V, which minimizes power losses and improves efficiency.
  • Vgs(th) (Max): A threshold voltage of 5V @ 250µA ensures reliable operation and consistent performance.
  • Series: The MDmesh™ DM2 series offers advanced features and performance benefits over standard models.
  • Current - Continuous Drain (Id): The device can handle continuous drain currents of up to 34A (Tc) at 25°C, making it suitable for high-current applications.

STW43N60DM2 Applications

The STW43N60DM2 is ideal for a variety of applications where high power, efficiency, and reliability are critical:

  1. Power Electronics: Due to its high power dissipation and low on-resistance, the STW43N60DM2 is well-suited for power electronics applications such as power supplies, converters, and inverters.
  2. Industrial Automation: The device's high voltage and current ratings make it an excellent choice for motor drives and control systems in industrial automation.
  3. Automotive: The STW43N60DM2 can be used in automotive applications such as electric vehicle charging systems, powertrain control, and battery management systems.

Conclusion of STW43N60DM2

The STW43N60DM2 from STMicroelectronics is a powerful MOSFET designed for high-performance applications. Its unique combination of low input capacitance, low on-resistance, and high voltage and current ratings make it an excellent choice for power electronics, industrial automation, and automotive applications. With its advanced features and performance benefits, the STW43N60DM2 offers a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW43N60DM2 Documents

Download datasheets and manufacturer documentation for STW43N60DM2

Ersa Wafer 15/Feb/2019      
Ersa STW43N60DM2      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW43N60DM2      

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