STMicroelectronics_STF7N105K5

STMicroelectronics
STF7N105K5  
Single FETs, MOSFETs

STMicroelectronics
STF7N105K5
278-STF7N105K5
Ersa
STMicroelectronics-STF7N105K5-datasheets-7491816.pdf
MOSFET N-CH 1050V 4A TO220FP
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STF7N105K5 Description

STF7N105K5 Description

The STF7N105K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 1050V and a continuous drain current (Id) of 4A at 25°C, this MOSFET is well-suited for a variety of power electronics applications.

STF7N105K5 Features

  • High Voltage and Current Ratings: The STF7N105K5 boasts a drain-to-source voltage (Vdss) of 1050V and a continuous drain current (Id) of 4A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 2Ω at 2A and 10V, this MOSFET offers low conduction losses, improving efficiency in power conversion circuits.
  • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±30V, ensuring reliable operation across a wide range of gate drive conditions.
  • Low Gate Charge: A maximum gate charge (Qg) of 17nC at 10V contributes to fast switching speeds and reduced switching losses.
  • Thermal Management: The STF7N105K5 can dissipate up to 25W of power (Tc), making it suitable for applications with high thermal demands.
  • Environmental Compliance: This MOSFET is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

STF7N105K5 Applications

The STF7N105K5 is well-suited for a variety of applications, including:

  • Power Supplies: Due to its high voltage and current ratings, this MOSFET is ideal for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and linear regulators.
  • Motor Control: The STF7N105K5's robust gate drive and low on-resistance make it suitable for motor control applications, including BLDC (Brushless DC) motor drives and stepper motor controllers.
  • Industrial Automation: This MOSFET's high voltage and current capabilities make it an excellent choice for industrial automation applications, such as motor drives and power distribution systems.

Conclusion of STF7N105K5

The STF7N105K5 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and robust gate drive capabilities. Its compliance with environmental regulations and ability to dissipate high power levels make it an ideal choice for a wide range of power electronics applications, including power supplies, motor control, and industrial automation.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STF7N105K5 Documents

Download datasheets and manufacturer documentation for STF7N105K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STF7N105K5      
Ersa STF7N105K5      

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