STMicroelectronics_STB33N65M2
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STMicroelectronics
STB33N65M2

278-STB33N65M2
PDF Datasheet
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
16 Weeks

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Tech Specifications

Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Eccn Code
EAR99
REACH
not_compliant
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STB33N65M2 Description

STB33N65M2 Description

The STB33N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to offer superior efficiency and reliability in various power management applications. This MOSFET utilizes advanced Metal Oxide technology, ensuring excellent electrical characteristics and robust performance. With a maximum drain-to-source voltage of 650V and a continuous drain current of 24A at 25°C, the STB33N65M2 is well-suited for demanding applications that require high voltage and current handling capabilities.

STB33N65M2 Features

  • High Voltage and Current Ratings: The STB33N65M2 boasts a maximum drain-to-source voltage of 650V and can handle continuous drain currents up to 24A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 140mOhm at 12A and 10V, the STB33N65M2 offers low power dissipation and high efficiency in switching applications.
  • Advanced MOSFET Technology: Utilizing Metal Oxide technology, the STB33N65M2 provides excellent electrical characteristics, including a maximum gate charge (Qg) of 41.5nC at 10V and an input capacitance (Ciss) of 1790pF at 100V.
  • Robust Operating Temperature: The STB33N65M2 can operate at junction temperatures up to 150°C, ensuring reliable performance in high-temperature environments.
  • Compliance and Environmental Standards: The STB33N65M2 is compliant with RoHS3 and REACH standards, making it suitable for environmentally conscious applications.

STB33N65M2 Applications

The STB33N65M2 is an ideal choice for various high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STB33N65M2 is well-suited for power supply designs, providing efficient power management and regulation.
  • Motor Drives: The low on-resistance and high current handling capabilities make the STB33N65M2 an excellent choice for motor drive applications, ensuring efficient motor control and operation.
  • Industrial Automation: The STB33N65M2's robust performance and high temperature capabilities make it suitable for industrial automation systems, where reliability and efficiency are critical.
  • Renewable Energy Systems: With its high voltage and current ratings, the STB33N65M2 can be used in renewable energy systems, such as solar inverters and wind power converters, to manage and regulate power flow efficiently.

Conclusion of STB33N65M2

The STB33N65M2 from STMicroelectronics is a high-performance N-Channel MOSFET that offers excellent electrical characteristics, robust performance, and compliance with environmental standards. Its high voltage and current ratings, low on-resistance, and advanced MOSFET technology make it an ideal choice for a wide range of high-power applications, including power supplies, motor drives, industrial automation, and renewable energy systems. With the STB33N65M2, designers can achieve efficient and reliable power management in demanding applications.

FAQ

What operating temperature range does STB33N65M2 support?
STB33N65M2 has an operating temperature range of 150.
What is the standard lead time for STB33N65M2?
What package or case is STB33N65M2 available in?
Is STB33N65M2 currently in stock?
Does STB33N65M2 have quantity-based pricing?
Availability (In Stock : 4 )
Quantity Unit Price Ext. Price
1+ $5.26115 $5.26
10+ $5.13257 $51.33
30+ $5.04685 $151.41
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