STMicroelectronics_STL75N8LF6

STMicroelectronics
STL75N8LF6  
Single FETs, MOSFETs

STMicroelectronics
STL75N8LF6
278-STL75N8LF6
Ersa
STMicroelectronics-STL75N8LF6-datasheets-10582665.pdf
MOSFET N-CH 80V 75A POWERFLAT
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STL75N8LF6 Description

STL75N8LF6 Description

The STL75N8LF6 from STMicroelectronics is an N-channel 80V, 75A power MOSFET designed for high-efficiency switching applications. Built using DeepGATE™ and STripFET™ VI technologies, it offers ultra-low on-resistance (Rds(on)) of 7.4mΩ @ 10V, minimizing conduction losses. The device features a PowerFlat™ (5x6) surface-mount package, optimized for space-constrained designs while ensuring excellent thermal performance with a maximum power dissipation of 80W (Tc). Though marked as obsolete, it remains a robust choice for legacy or cost-sensitive designs requiring high current handling and low-voltage drive capability.

STL75N8LF6 Features

  • Low Rds(on): 7.4mΩ @ 9A, 10V ensures reduced power loss in high-current applications.
  • High Current Capacity: 75A continuous drain current (Tc) supports demanding loads.
  • Fast Switching: Low gate charge (Qg) of 125nC @ 4.5V and input capacitance (Ciss) of 6895pF @ 25V enhance switching efficiency.
  • Compact Package: PowerFlat™ (5x6) offers superior thermal resistance and PCB space savings.
  • Compliance: ROHS3 and REACH compliant, with MSL 1 (Unlimited) moisture sensitivity.
  • Wide Drive Voltage Range: Optimized for 5V–10V gate drive, compatible with modern controllers.

STL75N8LF6 Applications

  • Power Supplies: High-efficiency DC-DC converters, SMPS, and voltage regulators.
  • Motor Control: Ideal for brushed/brushless motor drives in industrial and automotive systems.
  • Battery Management: Used in protection circuits and load switches for Li-ion/power tool batteries.
  • LED Lighting: Efficient driver solutions for high-power LED arrays.
  • Automotive Systems: Suitable for 48V mild-hybrid and auxiliary power distribution.

Conclusion of STL75N8LF6

The STL75N8LF6 combines low conduction losses, high current density, and compact packaging, making it a strong candidate for power electronics despite its obsolete status. Its DeepGATE™ technology ensures reliable performance in high-frequency switching, while the PowerFlat™ package addresses thermal challenges in dense layouts. Engineers designing high-current, low-voltage systems—particularly in automotive, industrial, and energy applications—can leverage its balance of efficiency and cost-effectiveness. For newer designs, consider STMicroelectronics' latest alternatives within the STripFET™ series for enhanced features.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STL75N8LF6 Documents

Download datasheets and manufacturer documentation for STL75N8LF6

Ersa STL1 30/Jun/2017      

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