The STL16N65M5 from STMicroelectronics is a 650V N-channel MOSFET utilizing advanced MDmesh™ V technology, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 12A (Tc) and low on-resistance (Rds(on)) of 299mΩ @ 10V, this device minimizes conduction losses, making it ideal for high-power-density designs. Its PowerFlat™ (8x8) HV package ensures superior thermal performance, supporting a maximum power dissipation of 90W (Tc). The MOSFET operates within a wide temperature range (-55°C to 150°C TJ) and features a low gate charge (Qg: 31nC @ 10V), enabling fast switching and reduced drive losses.
The STL16N65M5 stands out for its high voltage capability, low conduction losses, and superior thermal performance, making it a top choice for power electronics designers. Its MDmesh™ V technology and compact PowerFlat™ package provide a competitive edge in efficiency and space-constrained applications. While marked as obsolete, it remains a reliable solution for legacy designs requiring robust high-voltage switching performance. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET delivers a balance of power handling, speed, and thermal resilience.
Download datasheets and manufacturer documentation for STL16N65M5