STMicroelectronics_STL16N65M5

STMicroelectronics
STL16N65M5  
Single FETs, MOSFETs

STMicroelectronics
STL16N65M5
278-STL16N65M5
Ersa
STMicroelectronics-STL16N65M5-datasheets-1889216.pdf
MOSFET N-CH 650V 12A PWRFLAT HV
In Stock : 50805

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STL16N65M5 Description

STL16N65M5 Description

The STL16N65M5 from STMicroelectronics is a 650V N-channel MOSFET utilizing advanced MDmesh™ V technology, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 12A (Tc) and low on-resistance (Rds(on)) of 299mΩ @ 10V, this device minimizes conduction losses, making it ideal for high-power-density designs. Its PowerFlat™ (8x8) HV package ensures superior thermal performance, supporting a maximum power dissipation of 90W (Tc). The MOSFET operates within a wide temperature range (-55°C to 150°C TJ) and features a low gate charge (Qg: 31nC @ 10V), enabling fast switching and reduced drive losses.

STL16N65M5 Features

  • High Voltage Rating: 650V Vdss for robust performance in demanding applications.
  • Low Rds(on): 299mΩ @ 10V ensures minimal power loss and improved efficiency.
  • Fast Switching: Low gate charge (31nC) and input capacitance (1250pF @ 100V) enhance switching speed.
  • Thermal Efficiency: PowerFlat™ HV package optimizes heat dissipation, supporting 90W (Tc) power handling.
  • Reliability: RoHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term stability.
  • Wide Drive Voltage: ±25V Vgs(max) offers flexibility in gate drive design.

STL16N65M5 Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives: Efficient control in industrial and automotive systems.
  • Renewable Energy: Solar inverters and energy storage systems requiring high-voltage switching.
  • Lighting: LED drivers and ballast circuits.
  • Industrial Automation: High-frequency power switching in robotics and control systems.

Conclusion of STL16N65M5

The STL16N65M5 stands out for its high voltage capability, low conduction losses, and superior thermal performance, making it a top choice for power electronics designers. Its MDmesh™ V technology and compact PowerFlat™ package provide a competitive edge in efficiency and space-constrained applications. While marked as obsolete, it remains a reliable solution for legacy designs requiring robust high-voltage switching performance. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET delivers a balance of power handling, speed, and thermal resilience.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Pin Count
Mounting
Lead Shape
Part Status
Package Width
Typical Gate Charge @ Vgs (nC)

STL16N65M5 Documents

Download datasheets and manufacturer documentation for STL16N65M5

Ersa STL16N65M5      
Ersa IPD/15/9345 04/Aug/2015      
Ersa STL16N65M5      

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