STMicroelectronics_STD11NM65N

STMicroelectronics
STD11NM65N  
Single FETs, MOSFETs

STMicroelectronics
STD11NM65N
278-STD11NM65N
Ersa
STMicroelectronics-STD11NM65N-datasheets-6680438.pdf
MOSFET N CH 650V 11A DPAK
In Stock : 2506

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STD11NM65N Description

STD11NM65N Description

The STD11NM65N is a high-performance N-channel MOSFET designed and manufactured by STMicroelectronics. It is part of the MDmesh™ II series, which is known for its superior performance and reliability. This MOSFET is designed to operate in a wide range of applications, including power switching, motor control, and power management systems. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C, the STD11NM65N is capable of handling high power levels while maintaining efficiency and reliability.

STD11NM65N Features

  • High Drain-to-Source Voltage (Vdss): The STD11NM65N can withstand voltages up to 650V, making it suitable for high-voltage applications.
  • High Continuous Drain Current (Id): With a continuous drain current of 11A at 25°C, the STD11NM65N can handle significant power levels.
  • Low On-Resistance (Rds On): The maximum on-resistance at 5.5A and 10V is 455mOhm, ensuring efficient power transfer with minimal losses.
  • Low Gate Charge (Qg): The maximum gate charge is 29nC at 10V, which contributes to faster switching speeds and reduced power consumption.
  • Wide Operating Temperature Range: The STD11NM65N can operate at temperatures up to 150°C, making it suitable for a variety of environments.
  • Surface Mount Technology: The DPAK package allows for easy integration into surface mount applications, reducing footprint and improving performance.
  • Compliance with Industry Standards: The STD11NM65N is compliant with REACH and RoHS3 standards, ensuring environmental and safety compliance.

STD11NM65N Applications

The STD11NM65N is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  • Power Switching: Due to its high voltage and current ratings, the STD11NM65N is well-suited for power switching applications in consumer electronics and industrial systems.
  • Motor Control: The low on-resistance and high current capabilities make it an excellent choice for motor control applications, such as in electric vehicles and industrial automation.
  • Power Management Systems: The STD11NM65N can be used in power management systems to regulate and control power distribution in various electronic devices.

Conclusion of STD11NM65N

The STD11NM65N from STMicroelectronics is a robust and efficient N-channel MOSFET that offers high performance in terms of voltage and current handling. Its unique features, such as low on-resistance and gate charge, make it an excellent choice for high-power applications. With compliance to industry standards and a wide operating temperature range, the STD11NM65N is a reliable and versatile component for various electronics applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD11NM65N Documents

Download datasheets and manufacturer documentation for STD11NM65N

Ersa Assembly Site 22/Dec/2022      
Ersa STx(x)11NM65N      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD11NM65N View All Specifications      
Ersa STx(x)11NM65N      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service