STMicroelectronics

SCT50N120

SCT50N120 Description

The SCT50N120 from STMicroelectronics is a high-performance N-channel SiCFET (Silicon Carbide) MOSFET designed for demanding power electronics applications. Rated for 1200V drain-to-source voltage (Vdss) and 65A continuous drain current (Id), it delivers superior efficiency and thermal performance compared to traditional silicon-based MOSFETs. With an Rds(on) as low as 69mΩ at 40A and 20V gate drive, this device minimizes conduction losses, making it ideal for high-power switching applications. Packaged in the robust HiP247™ through-hole module, it ensures reliable operation in harsh environments.

SCT50N120 Features

• SiC Technology: Offers lower switching losses, higher thermal conductivity, and better high-temperature stability than silicon MOSFETs.
• High Voltage & Current Handling: Supports 1200V Vdss and 65A continuous current (Tc), suitable for industrial and automotive applications.
• Low Gate Charge (Qg): 122nC @ 20V ensures fast switching and reduced drive losses.
• Low Input Capacitance (Ciss): 1900pF @ 400V enhances high-frequency performance.
• High Power Dissipation: 318W (Tc) enables efficient thermal management.
• Reliable Packaging: HiP247™ through-hole design ensures mechanical robustness and easy mounting.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for global regulatory adherence.

SCT50N120 Applications

• Electric Vehicle (EV) Systems: On-board chargers, DC-DC converters, and traction inverters benefit from its high efficiency and thermal resilience.
• Renewable Energy: Solar inverters and wind power converters leverage its high-voltage capability and low losses.
• Industrial Power Supplies: Uninterruptible power supplies (UPS) and motor drives utilize its fast switching and rugged design.
• High-Frequency Converters: Telecom and server power supplies exploit its low Ciss and Qg for improved efficiency.

Conclusion of SCT50N120

The SCT50N120 stands out as a high-efficiency, high-reliability SiCFET MOSFET for next-generation power electronics. Its low Rds(on), fast switching, and robust HiP247™ package make it a top choice for EV, renewable energy, and industrial applications where performance and durability are critical. STMicroelectronics' advanced SiC technology ensures this device outperforms conventional silicon MOSFETs in efficiency, thermal management, and power density.