onsemi
FDH055N15A
Single FETs, MOSFETs
FDH055N15A
278-FDH055N15A
onsemi-FDH055N15A-datasheets-7540461.pdf
MOSFET N-CH 150V 158A TO247-3
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FDH055N15A Description
FDH055N15A is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. Here is a brief description of the device along with its features and applications:
Description:
The FDH055N15A is an N-channel enhancement mode field effect transistor (MOSFET) designed for high voltage applications. It is a 5th generation TrenchFET technology that offers improved performance and reliability compared to previous generations.
Features:
- High Voltage: The FDH055N15A is rated for a maximum drain-source voltage (VDS) of 1500V, making it suitable for high voltage applications.
- Low On-Resistance: The device has a low on-state resistance (RDS(on)) of 0.55 ohms (typical) at a gate-source voltage (VGS) of 10V, which helps reduce power dissipation and improve efficiency.
- High Input Impedance: The MOSFET has a high input impedance, which allows it to be easily driven by a variety of control circuits.
- Avalanche Energy Rated: The FDH055N15A is designed to withstand high energy transients, making it suitable for applications where the device may be subjected to high energy pulses.
- TrenchFET Technology: The device uses 5th generation TrenchFET technology, which provides improved performance and reliability compared to previous generations.
Applications:
The FDH055N15A is suitable for a wide range of high voltage applications, including:
- Motor Control: The MOSFET can be used in motor control circuits for industrial and automotive applications.
- Power Supplies: The device can be used in high voltage power supply circuits, such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
- Renewable Energy: The FDH055N15A can be used in power electronics for renewable energy applications, such as solar panel inverters and wind turbine converters.
- Battery Management: The MOSFET can be used in battery management systems for electric vehicles and energy storage systems.
- Industrial Automation: The device can be used in various industrial automation applications, such as robotic control and programmable logic controllers (PLCs).
Overall, the FDH055N15A is a high performance MOSFET that offers excellent electrical characteristics and reliability for a wide range of high voltage applications.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Standard Package Name
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
SVHC
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Material
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
FDH055N15A Documents
Download datasheets and manufacturer documentation for FDH055N15A
HUF7565x/FDH055x 20/Jun/2022 FDH055N15A Mult Devices 24/Oct/2017 Packing quantity increase 28/Dec/2020 Logo 17/Aug/2017 Dimension/Color Change 24/Feb/2021 onsemi RoHS onsemi REACH Material Declaration FDH055N15A Related Parts
Shopping Guide
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