STMicroelectronics_STP40NF10L

STMicroelectronics
STP40NF10L  
Single FETs, MOSFETs

STMicroelectronics
STP40NF10L
278-STP40NF10L
MOSFET N-CH 100V 40A TO220AB
In Stock : 1391

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STP40NF10L Description

STP40NF10L Description

The STP40NF10L is a high-performance MOSFET N-CH 100V 40A TO220AB from STMicroelectronics, designed for demanding applications requiring high power dissipation and robust performance. With a maximum drain-source voltage of 100V and continuous drain current of 40A at 25°C, this device is ideal for applications that demand high power and reliability. The STP40NF10L is manufactured using advanced MOSFET technology, ensuring low on-resistance and high efficiency.

STP40NF10L Features

  • High Power Dissipation: The STP40NF10L can dissipate up to 150W of power at the case temperature (Tc), making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 33mOhm at 20A and 10V, this MOSFET offers high efficiency and low power losses.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±17V, ensuring reliable operation even under fluctuating input conditions.
  • Compliance: The STP40NF10L is compliant with RoHS3 standards, making it environmentally friendly and suitable for use in various industries.
  • Moisture Sensitivity Level (MSL) 1: This indicates that the device can be stored and handled without special precautions, simplifying logistics and inventory management.

STP40NF10L Applications

The STP40NF10L's high power capabilities and robust performance make it ideal for a variety of applications, including:

  • Industrial Control Systems: Due to its high power dissipation and continuous drain current, the STP40NF10L is well-suited for use in motor control and power management systems.
  • Automotive Applications: The device's ability to handle high voltages and currents makes it a good fit for automotive electronics, such as electric vehicle chargers and powertrain control systems.
  • Power Supplies: In power supply designs, the STP40NF10L can be used for efficient power conversion and regulation, thanks to its low on-resistance and high voltage capabilities.

Conclusion of STP40NF10L

The STP40NF10L from STMicroelectronics is a powerful and reliable MOSFET designed for high-power applications. Its unique combination of high power dissipation, low on-resistance, and compliance with environmental standards make it a standout choice for demanding applications in industrial control, automotive, and power supply sectors. With its robust performance and versatility, the STP40NF10L is a valuable component for engineers looking to push the boundaries of their designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP40NF10L Documents

Download datasheets and manufacturer documentation for STP40NF10L

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