The STD16NF06T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and low on-resistance. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 16A at 25°C, this device delivers exceptional performance in demanding power electronic applications.
STD16NF06T4 Features
Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss.
Drain to Source Voltage (Vdss): 60V - Suitable for high-voltage applications.
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) - Capable of handling high current loads.
Rds On (Max) @ Id, Vgs: 70mOhm @ 8A, 10V - Offers low on-resistance for high efficiency.
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V - Minimizes power loss during switching.
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 15 V - Reduces parasitic effects and improves switching speed.
Vgs (Max): ±20V - Provides flexibility in gate voltage requirements.
Drive Voltage (Max Rds On, Min Rds On): 10V - Simplifies gate drive circuit design.
Mounting Type: Surface Mount - Ideal for compact and space-constrained applications.
Package: DPAK - Offers excellent thermal performance and ease of handling.
STD16NF06T4 Applications
The STD16NF06T4 is ideal for a wide range of applications where high power dissipation, low on-resistance, and high efficiency are critical. Some specific use cases include:
Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, the STD16NF06T4's high Vdss and low Rds On make it an excellent choice for primary and secondary side switching.
Motor Control: The device's high current capability and low on-resistance make it suitable for motor drive applications, including industrial motor control and electric vehicle (EV) motor control.
Renewable Energy: In solar inverters and wind power inverters, the STD16NF06T4 can efficiently handle the high power and voltage requirements of these applications.
Conclusion of STD16NF06T4
The STD16NF06T4 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage, low on-resistance, and low gate charge. Its unique features, such as the STripFET™ II series and DPAK package, make it an ideal choice for high-power applications in power supplies, motor control, and renewable energy systems. With its high performance and compliance with industry standards like RoHS3 and REACH, the STD16NF06T4 is a reliable and eco-friendly solution for demanding power electronic applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STD16NF06T4 Documents
Download datasheets and manufacturer documentation for STD16NF06T4
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Shipping Rate
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