STMicroelectronics_STP4NK60ZFP

STMicroelectronics
STP4NK60ZFP  
Single FETs, MOSFETs

STMicroelectronics
STP4NK60ZFP
278-STP4NK60ZFP
Ersa
STMicroelectronics-STP4NK60ZFP-datasheets-8205563.pdf
MOSFET N-CH 600V 4A TO220FP
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    STP4NK60ZFP Description

    STP4NK60ZFP Description

    The STP4NK60ZFP is a high-performance N-Channel MOSFET from STMicroelectronics. It is designed to offer superior performance in a wide range of applications. With a drain-to-source voltage of 600V and a continuous drain current of 4A at 25°C, the STP4NK60ZFP is capable of handling high voltage and current requirements. Its low on-resistance of 2Ω at 2A and 10V ensures high efficiency and low power dissipation, making it ideal for power electronics applications.

    STP4NK60ZFP Features

    • High Voltage and Current Handling: The STP4NK60ZFP can handle drain-to-source voltages up to 600V and continuous drain currents up to 4A at 25°C.
    • Low On-Resistance: With an on-resistance of just 2Ω at 2A and 10V, the STP4NK60ZFP offers high efficiency and low power dissipation.
    • Robust Gate Drive: The device has a maximum gate-source voltage of ±30V, ensuring reliable operation in various gate drive conditions.
    • Low Gate Charge: The maximum gate charge is just 26nC at 10V, reducing switching losses and improving efficiency.
    • High Temperature Operation: The STP4NK60ZFP can operate at junction temperatures up to 150°C, making it suitable for high-temperature applications.
    • Compliance with Regulations: The device is compliant with RoHS3 and REACH regulations, ensuring environmental and safety compliance.

    STP4NK60ZFP Applications

    The STP4NK60ZFP is ideal for a wide range of applications where high voltage and current handling are required. Some specific use cases include:

    • Power Electronics: The high voltage and current ratings make it suitable for power conversion and regulation applications.
    • Industrial Control: The device can be used in motor drives and control systems that require high voltage and current handling.
    • Automotive Applications: The STP4NK60ZFP can be used in various automotive applications, such as electric vehicle charging systems and power management.
    • Renewable Energy: The device can be used in solar power inverters and wind turbine control systems due to its high voltage and current ratings.

    Conclusion of STP4NK60ZFP

    The STP4NK60ZFP from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior voltage and current handling capabilities. Its low on-resistance, robust gate drive, and compliance with environmental regulations make it an ideal choice for a wide range of applications, including power electronics, industrial control, automotive, and renewable energy. With its unique features and advantages, the STP4NK60ZFP stands out as a reliable and efficient solution for high-voltage and high-current applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STP4NK60ZFP Documents

    Download datasheets and manufacturer documentation for STP4NK60ZFP

    Ersa STP4NK60Z(FP)      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STP4NK60ZFP View All Specifications      
    Ersa STP4NK60Z(FP)      
    Ersa Marking Layout 10/May/2023      

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