STMicroelectronics_STB25NM50N

STMicroelectronics
STB25NM50N  
Single FETs, MOSFETs

STMicroelectronics
STB25NM50N
278-STB25NM50N
Ersa
STMicroelectronics-STB25NM50N-datasheets-3396419.pdf
MOSFET N-CH 500V 22A D2PAK
In Stock : 3509

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STB25NM50N Description

STB25NM50N Description

The STB25NM50N from STMicroelectronics is a 500V N-channel MOSFET belonging to the MDmesh™ II series, designed for high-efficiency power switching applications. Housed in a D2PAK (TO-263) surface-mount package, it offers a continuous drain current (Id) of 22A at 25°C (case temperature) and a low on-resistance (Rds(on)) of 140mΩ at 10V gate drive. With a gate charge (Qg) of 84nC and input capacitance (Ciss) of 2565pF, it balances switching performance and power handling. Though marked obsolete, its RoHS3 compliance and REACH-unaffected status ensure environmental adherence. The device operates up to 150°C junction temperature and supports ±25V gate-source voltage (Vgs), making it robust for demanding environments.

STB25NM50N Features

  • High Voltage Rating: 500V Vdss for industrial and automotive applications.
  • Low Rds(on): 140mΩ @ 10V Vgs minimizes conduction losses.
  • Fast Switching: Optimized Qg (84nC) and Ciss (2565pF) for efficient high-frequency operation.
  • Thermal Performance: 160W power dissipation (Tc) and 150°C TJ(max) ensure reliability.
  • Advanced Technology: MDmesh™ II reduces switching losses and improves avalanche ruggedness.
  • Packaging: D2PAK (TO-263) with Tape & Reel (TR) for automated assembly.

STB25NM50N Applications

  • Power Supplies: High-voltage SMPS, PFC stages, and DC-DC converters.
  • Motor Drives: Inverters and H-bridge configurations in industrial systems.
  • Lighting: LED drivers and ballast control.
  • Renewable Energy: Solar inverters and battery management.
  • Automotive: Auxiliary power systems and charging circuits.

Conclusion of STB25NM50N

The STB25NM50N is a high-performance MOSFET tailored for high-voltage, high-current switching with low losses. Its MDmesh™ II technology and robust thermal characteristics make it suitable for industrial, automotive, and renewable energy systems. While obsolete, its efficiency, ruggedness, and compliance ensure it remains viable for legacy designs or specific high-reliability applications. Engineers should evaluate alternatives for new designs but can leverage this device’s proven performance in existing implementations.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STB25NM50N Documents

Download datasheets and manufacturer documentation for STB25NM50N

Ersa STx25NM50N      
Ersa STx25NM50N      

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