The STB25NM50N from STMicroelectronics is a 500V N-channel MOSFET belonging to the MDmesh™ II series, designed for high-efficiency power switching applications. Housed in a D2PAK (TO-263) surface-mount package, it offers a continuous drain current (Id) of 22A at 25°C (case temperature) and a low on-resistance (Rds(on)) of 140mΩ at 10V gate drive. With a gate charge (Qg) of 84nC and input capacitance (Ciss) of 2565pF, it balances switching performance and power handling. Though marked obsolete, its RoHS3 compliance and REACH-unaffected status ensure environmental adherence. The device operates up to 150°C junction temperature and supports ±25V gate-source voltage (Vgs), making it robust for demanding environments.
The STB25NM50N is a high-performance MOSFET tailored for high-voltage, high-current switching with low losses. Its MDmesh™ II technology and robust thermal characteristics make it suitable for industrial, automotive, and renewable energy systems. While obsolete, its efficiency, ruggedness, and compliance ensure it remains viable for legacy designs or specific high-reliability applications. Engineers should evaluate alternatives for new designs but can leverage this device’s proven performance in existing implementations.
Download datasheets and manufacturer documentation for STB25NM50N