STMicroelectronics

STL3NM60N

STL3NM60N Description

The STL3NM60N is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring efficient power management and control. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 0.65A, this N-channel MOSFET is well-suited for various power electronics applications.

STL3NM60N Features

• Input Capacitance (Ciss): 188 pF @ 50V, ensuring fast switching and minimal power loss.
• Gate Charge (Qg): 9.5 nC @ 10V, reducing switching losses and improving efficiency.
• Drain to Source Voltage (Vdss): 600V, suitable for high-voltage applications.
• Power Dissipation: 2W (Ta) and 22W (Tc), providing robust thermal performance.
• Rds On (Max): 1.8 Ohm @ 1A, 10V, offering low on-resistance for reduced power dissipation.
• Vgs(th) (Max): 4V @ 250µA, ensuring reliable gate control.
• Series: MDmesh™ II, known for its excellent electrical performance and thermal stability.
• Mounting Type: Surface Mount
• Technology: MOSFET (Metal Oxide), offering high efficiency and low power loss.
• REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
• RoHS Status: ROHS3 Compliant, adhering to environmental standards.
• Moisture Sensitivity Level (MSL): 1 (Unlimited), suitable for various environmental conditions.

STL3NM60N Applications

The STL3NM60N is ideal for applications where high voltage and power efficiency are critical, such as:

• Power Supplies: In switch-mode power supplies (SMPS) and power conversion circuits.
• Motor Controls: For electric vehicles, industrial drives, and robotics.
• Renewable Energy: In solar inverters and wind power systems.
• Automotive Electronics: For electric and hybrid vehicle systems, including battery management and motor control.

Conclusion of STL3NM60N

The STL3NM60N stands out for its high-voltage capability, low on-resistance, and robust thermal performance. Its unique features, such as the MDmesh™ II series and PowerFlat™ package, provide superior electrical performance and ease of integration. This MOSFET is an excellent choice for demanding power electronics applications, offering a balance of performance, reliability, and environmental compliance.