The STY60NK30Z from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Part of the SuperMESH™ series, it features a 300V drain-to-source voltage (Vdss) and 60A continuous drain current (Id) at 25°C, making it ideal for high-power switching. With a low on-resistance (Rds(on)) of 45mΩ at 10V gate drive, it ensures minimal conduction losses, enhancing efficiency in power systems. The device is housed in the MAX247™ package, optimized for thermal performance and mechanical robustness.
The STY60NK30Z excels in applications requiring high efficiency and reliability, including:
The STY60NK30Z stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its SuperMESH™ technology, low Rds(on), and robust thermal performance make it superior to standard MOSFETs in high-power applications. Whether in SMPS, motor drives, or industrial systems, this device delivers optimal performance, making it a top choice for engineers seeking a balance of power, efficiency, and durability.
Download datasheets and manufacturer documentation for STY60NK30Z