The STW30N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built on the advanced MDmesh™ V technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 22A at 25°C (Tc). With an ultra-low on-resistance (Rds(on)) of 139mΩ at 10V Vgs, this device ensures minimal conduction losses, making it highly efficient for high-power switching applications. The MOSFET is housed in a TO-247-3 package, providing excellent thermal performance and mechanical durability.
This MOSFET excels in high-voltage, high-efficiency applications, including:
The STW30N65M5 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low Rds(on), fast switching, and excellent thermal performance make it a superior choice for industrial and energy applications. With STMicroelectronics' MDmesh™ V technology, this device delivers enhanced performance over conventional MOSFETs, ensuring optimal power handling and longevity in demanding environments.
Download datasheets and manufacturer documentation for STW30N65M5