STMicroelectronics_STW30N65M5

STMicroelectronics
STW30N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW30N65M5
278-STW30N65M5
Ersa
STMicroelectronics-STW30N65M5-datasheets-11704350.pdf
MOSFET N-CH 650V 22A TO247-3
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STW30N65M5 Description

STW30N65M5 Description

The STW30N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built on the advanced MDmesh™ V technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 22A at 25°C (Tc). With an ultra-low on-resistance (Rds(on)) of 139mΩ at 10V Vgs, this device ensures minimal conduction losses, making it highly efficient for high-power switching applications. The MOSFET is housed in a TO-247-3 package, providing excellent thermal performance and mechanical durability.

STW30N65M5 Features

  • High Voltage & Current Handling: Supports 650V Vdss and 22A Id, ideal for high-power circuits.
  • Low Rds(on): 139mΩ @ 10V Vgs reduces power dissipation and improves efficiency.
  • Fast Switching: Optimized gate charge (Qg = 64nC @ 10V) and input capacitance (Ciss = 2880pF @ 100V) ensure rapid switching performance.
  • Robust Thermal Performance: Rated for 140W power dissipation (Tc) and 150°C junction temperature (TJ).
  • Wide Gate Drive Range: Vgs(max) of ±25V allows flexible drive circuit design.
  • Reliability & Compliance: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term reliability.

STW30N65M5 Applications

This MOSFET excels in high-voltage, high-efficiency applications, including:

  • Switched-Mode Power Supplies (SMPS): Enhances efficiency in AC-DC and DC-DC converters.
  • Motor Drives & Inverters: Suitable for industrial motor control and renewable energy systems.
  • Induction Heating & Welding Equipment: High voltage tolerance and thermal stability ensure reliable operation.
  • Uninterruptible Power Supplies (UPS): Optimizes power conversion with low conduction losses.

Conclusion of STW30N65M5

The STW30N65M5 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low Rds(on), fast switching, and excellent thermal performance make it a superior choice for industrial and energy applications. With STMicroelectronics' MDmesh™ V technology, this device delivers enhanced performance over conventional MOSFETs, ensuring optimal power handling and longevity in demanding environments.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW30N65M5 Documents

Download datasheets and manufacturer documentation for STW30N65M5

Ersa STx30N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW30N65M5 View All Specifications      
Ersa STx30N65M5      

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