The STP40N60M2 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 34A at 25°C, this N-channel device delivers exceptional performance in demanding power electronics applications.
STP40N60M2 Features
High Voltage and Current Ratings: The STP40N60M2 boasts a drain-to-source voltage of 600V and can handle a continuous drain current of 34A at 25°C, making it suitable for high-power applications.
Low On-Resistance: With a maximum Rds(on) of 88mΩ at 17A and 10V, this device offers low conduction losses, improving efficiency in power conversion systems.
Fast Switching: The gate charge (Qg) is a maximum of 57nC at 10V, enabling fast switching and reduced switching losses.
Robust Gate Drive: The device can handle gate-source voltages up to ±25V, providing flexibility in gate drive circuit design.
Thermal Management: Capable of dissipating up to 250W of power, the STP40N60M2 is well-suited for applications where heat management is critical.
Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory adherence.
STP40N60M2 Applications
The STP40N60M2 is ideal for a variety of high-power applications where efficiency and reliability are paramount:
Power Supplies: Its high voltage and current ratings make it suitable for power supply designs, particularly in industrial and automotive applications.
Motor Control: The low on-resistance and fast switching capabilities are beneficial in motor control applications, providing efficient power delivery and precise control.
Renewable Energy Systems: In solar inverters and wind power systems, the STP40N60M2 can handle the high voltages and currents required for energy conversion and management.
Electric Vehicles: The device's robustness and efficiency make it a good fit for the power electronics in electric and hybrid vehicles, including battery management systems and.
Conclusion of STP40N60M2
The STP40N60M2 from STMicroelectronics stands out for its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its robust design, compliance with environmental standards, and suitability for a wide range of high-power applications make it an excellent choice for engineers looking to optimize power electronics performance.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STP40N60M2 Documents
Download datasheets and manufacturer documentation for STP40N60M2
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